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參數(shù)資料
| 型號： | TIC216 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | TIC216 |
TIC216 SERIES
SILICON TRIACS
2
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
, t
p(g)
= 20
μ
s, t
r
=
≤
15 ns, f = 1 kHz.
V
TM
Peak on-state voltage
I
TM
= ±8.4 A
V
supply
= +12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= -12 V
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 6)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
±1.7
30
-30
V
I
H
Holding current
mA
I
L
Latching current
(see Note 7)
50
-20
mA
dv/dt
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110°C
±50
V/μs
dv/dt
(c)
V
DRM
= Rated V
DRM
I
TRM
= ±8.4 A
T
C
= 70°C
±5
V/μs
thermal characteristics
PARAMETER
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
相關PDF資料 |
PDF描述 |
|---|---|
| TIC216 | SILICON TRIACS |
| TIC216A | SILICON TRIACS |
| TIC216B | SILICON TRIACS |
| TIC216C | SILICON TRIACS |
| TIC216D | SILICON TRIACS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TIC216A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SILICON TRIACS |
| TIC216A_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON TRIACS |
| TIC216B | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SILICON TRIACS |
| TIC216C | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SILICON TRIACS |
| TIC216D | 制造商:Bourns Inc 功能描述:TRIAC 400V 6A |
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