- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384974 > THS4271DGKR (Texas Instruments, Inc.) LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | THS4271DGKR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER |
| 中文描述： | 低噪聲，高擺率，單位增益穩(wěn)定電壓留言反饋放大器 |
| 文件頁數(shù)： | 2/38頁 |
| 文件大小： | 1055K |
| 代理商： | THS4271DGKR |
第1頁當(dāng)前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
SLOS397E JULY 2002 REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
16.5 V
±
V
S
100 mA
Supply voltage, V
S
Input voltage, V
I
Output current, I
O
Continuous power dissipation See Dissipation Rating Table
Maximum junction temperature, T
J
Maximum junction temperature, continuous
operation, long term reliability T
J (2)
Storage temperature range, T
stg
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
150
°
C
125
°
C
65
°
C to 150
°
C
300
°
C
HBM
3000 V
ESD ratings:
CDM
1500 V
MM
1000 V
(1)
The absolute maximum temperature under any condition is
limited by the constraints of the silicon process. Stresses above
these ratings may cause permanent damage. Exposure to
absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
θ
JC
(
°
C/W)
(
°
C/W)
POWER RATING
(2)
TA
≤
25
°
C
1.02 W
θ
JA
(1)
TA = 85
°
C
410 mW
D (8 pin)
DGN (8 pin)(3)
38.3
97.5
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
DRB (8 pin)(3)
(1)This data was taken using the JEDEC standard High-K test PCB.
(2)Power rating is determined with a junction temperature of 125
°
C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125
°
C for best performance and
long term reliability.
(3)
The THS4271/5 may incorporate a PowerPAD
on the underside
of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical briefs SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
54.2
260
385 mW
154 mW
5
45.8
2.18 W
873 mW
RECOMMENDED OPERATING CONDITIONS
MIN
±
2.5
5
MAX
±
7.5
15
VS+ 1.4
UNIT
Supply voltage, (VS+ and VS)
Dual supply
Single supply
V
Input common-mode voltage range
VS + 1.4
V
PACKAGING/ORDERING INFORMATION
ORDERABLE PACKAGE AND NUMBER
PLASTIC
SMALL OUTLINE
(D) (1)
LEADLESS MSOP 8 (2)
PLASTIC MSOP (1)
PowerPAD
PLASTIC MSOP (1)
(DRB)
(DGN)
PACKAGE
MARKING
(DGK)
PACKAGE
MARKING
THS4271D
THS4271DRBT
THS4271DGN
BFQ
THS4271DGK
BEY
THS4271DR
THS4271DRBR
THS4271DGNR
THS4271DGKR
THS4275D
THS4275DRBT
THS4275DGN
BFR
THS4275DGK
BJD
THS4275DR
THS4275DRBR
THS4275DGNR
THS4275DGKR
(1)All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4271DGNR).
(2)All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4271DRBT).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| THS4271DRBR | LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER |
| THS4275DGK | LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER |
| THS4275DGKR | LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER |
| THS4275DGNR | LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER |
| THS4275DR | LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THS4271DGKRG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4271DGN | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4271DGN | 制造商:Texas Instruments 功能描述:IC SM OP-AMP HI-SPEED VFB |
| THS4271DGN | 制造商:Texas Instruments 功能描述:OP AMP HIGH SPEED VFB HTSSOP 427 |
| THS4271DGNG4 | 功能描述:高速運算放大器 Super-Fast Ultra-Low Distortion RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。