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參數(shù)資料
| 型號： | THN6301Z |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 217K |
| 代理商： | THN6301Z |
THN6301 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
Symbol
Parameter
Test Condition
Unit
dB
OIP
3
Output 3rd Order Intercept
dBm
-
-
-
-
-
-
Minimum Noise Figure
1.1
dB
Noise Resistance
0.09
-
-
-
-
Insertion Power Gain
dB
14.5
MAG
Maximum Available Gain
16.5
dB
18
GHz
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
10
pF
Collector Cut-off Current
V
CB
= 19 V, I
E
= 0 mA
Transition Frequency
V
CE
= 8 V, I
C
= 15 mA
V
CE
= 8 V, I
C
= 15 mA
Emitter Cut-off Current
DC Current Gain
14.5
NFmin
I
CEO
I
EBO
h
FE
f
T
I
CBO
rn
15.5
27
-
-
-
-
C
CB
|S
21
|
2
G
A
Associated Gain
0.55
5
-
-
-
-
80
150
0.5
300
-
0.5
Max.
Min.
Typ.
Value
uA
uA
uA
12.5
-
10
12
15
16
-
-
-
-
www.tachyonics.co.kr
- 2/11 -
Aug.-2005
Rev 2.0
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PDF描述 |
|---|---|
| THN6501S | NPN Planer RF TRANSISTOR |
| THN6501Z | NPN SiGe RF TRANSISTOR |
| THN6501 | NPN SiGe RF TRANSISTOR |
| THN6501E | NPN SiGe RF TRANSISTOR |
| THN6501U | NPN SiGe RF TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THN6501 | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SiGe RF TRANSISTOR |
| THN6501E | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6501F | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6501S | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6501U | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
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