參數(shù)資料
型號: THN6201S
廠商: Tachyonics CO,. LTD.
英文描述: NPN Planer RF TRANSISTOR
中文描述: npn型刨射頻晶體管
文件頁數(shù): 2/12頁
文件大?。?/td> 153K
代理商: THN6201S
THN6201S
Electrical Characteristics
( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
PARAMETER
n A
n A
V
CE
=3V, Ic=5mA,f=2GHz
V
CE
=3V, Ic=5mA,f=1GHz
130
V
CE
=3V, Ic=15mA,f=2GHz
CONDITION
V
CE
=3V, Ic=5mA,f=1GHz
V
CE
=3V, Ic=15mA,f=1GHz
V
CE
= 3V, Ic = 15mA
Unit
20
12
25
14
V
V
V
CE
=3V, Ic=15mA,f=2GHz
V
CE
=3V, Ic=5mA,f=1GHz
9.5
8.5
16
16.5
10.5
11
1.1
G
A
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
f
T
C
CB
V
CB
= 10V, f = 1MHz
0.47
SYMBOL
12
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
PARAMETER
CONDITION
VALUE
V
CE
= 3V, Ic = 15mA
300
100
pF
Unit
VALUE
GHz
13
14.5
7.5
Associated Gain
V
CE
=3V, Ic=5mA,f=2GHz
V
CE
=3V, Ic=15mA,f=2GHz
[S21]
2
MSG
MAG
V
CE
=3V, Ic=5mA,f=1GHz
V
CE
=3V, Ic=5mA,f=2GHz
Maximum Available Gain
V
CE
=3V, Ic=15mA,f=1GHz
Insertion Power Gain
Maximum Stable Gain
dB
dB
rn
Noise Resistance
V
CE
=3V, Ic=5mA,f=1GHz
V
CE
=3V, Ic=5mA,f=2GHz
0.06
0.04
NFmin
P
-1dB
1dB Compression point
dB
Minium Noise Figure
V
CE
=3V, Ic=5mA,f=2GHz
1.5
V
CE
=3V, Ic=15mA,f=1GHz
14
15.5
V
CE
=3V, Ic=15mA,f=1GHz
(Zs=Zsopt, Z
L
=Z
L
opt)
10
dBm
dB
10.5
www.tachyonics.co.kr
- 2/12 -
Aug-2003
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