參數(shù)資料
型號： THN6201KF
廠商： Tachyonics CO,. LTD.
英文描述： NPN SiGe RF TRANSISTOR
中文描述： npn型硅鍺射頻晶體管
文件頁數(shù)： 2/13頁
文件大?。?/td> 261K
代理商： THN6201KF
THN6201 series
□
Electrical Characteristics
( T
A
= 25
℃
)
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector to Base Capacitance
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
-
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
-
-
12.5
14
8
13
6
7.5
-
11.5
-
-
-
uA
uA
Value
Typ. Max.
uA
V
CB
= 10 V, f = 1 MHz
-
-
-
Unit
Min.
-
9.5
17
18.5
12
13
1.1
Associated Gain
G
A
0.12
0.06
MAG
rn
Parameter
Test Condition
C
CB
I
CBO
I
CEO
I
EBO
Symbol
0.47
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
(Z
S
= Z
Sopt
, Z
L
= Z
Lopt
)
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA
V
CE
= 3 V, I
C
= 15 mA
-
-
-
-
P
1dB, IN
Input 1dB Compression Point
0.5
13.5
15
8
pF
5
80
200
0.5
300
12
dB
1.5
14.5
16
Maximum Available Gain
15
16.5
10
11
-
-
Minimum Noise Figure
Noise Resistance
NFmin
10
GHz
Insertion Power Gain
dB
10
dBm
dB
11
dB
h
FE
|S
21
|
2
f
T
www.tachyonics.co.kr
- 2/13 -
Aug.-2005
Rev 2.0
相關PDF資料
PDF描述
THN6201U NPN SiGe RF TRANSISTOR
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相關代理商/技術參數(shù)
參數(shù)描述
THN6201S 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor
THN6201U 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor
THN6201Z 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor
THN6301 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SiGe RF TRANSISTOR
THN6301E 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor
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