參數(shù)資料
型號: THN5601SF
廠商: Tachyonics CO,. LTD.
英文描述: NPN SiGe RF POWER TRANSISTOR
中文描述: npn型硅鍺射頻功率晶體管
文件頁數(shù): 6/11頁
文件大小: 335K
代理商: THN5601SF
THN5601SF
APPLICATION INFORMATION (III)
RF performance at Ts
60
in common emitter test circuit
Note : L5 and L6 are 8Turn/2.0mm, Air Coil Inductors.
L2 is 2 turn/1.0mm, Air Coil Inductors.
L3 is 5 turn/1.0mm, Air Coil Inductors.
C1 ~ C13, L1 : 1608 size
Mode of Operation
f [MHz]
V
CE
[V]
P
L
[dBm]
Fig 13. POUT vs Gp,
η
C (Vce=4.5V, Icq=5mA, 465MHz)Fig 14. Pin vs Gp, POUT (Vce=4.5V, Icq=5mA, 465MHz)
Fig 15. Freq = 465MHZ Test Schematic
G
P
[dB]
C
[%]
CW, class-AB
465
4.5 (Icq=5mA)
27
BJ T _NPN
T HN5601
C
C2
C=15 pF
C
C5
C=8 pF
C
C4
C=13 pF
Port
Vcc
C
C8
C=1 uF
C
C9
C=1 nF
Port
RF_OUT
C
C7
C=470 pF
BJ T _NPN
T HN6501U
R
R1
R=1 kOhm
C
C13
C=1 uF
C
C12
C=1 nF
C
C11
C=470 pF
C
C10
C=470 pF
C
C1
C=470 pF
L
L3
L
L2
L
L6
L
L5
C
C3
C=15 pF
L
L1
L=6.8 nH
Port
RF_IN
www.tachyonics.co.kr
-6/11-
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