參數(shù)資料
型號(hào)： THMC41SOPD
廠商： Texas Instruments, Inc.
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： VARIABLE SPEED 12-VDC BRUSHLESS FAN MOTOR DRIVERS
中文描述： 變速12伏直流無刷風(fēng)扇電機(jī)驅(qū)動(dòng)器
文件頁數(shù)： 4/17頁
文件大?。?/td> 238K
代理商： THMC41SOPD
THMC40, THMC41
VARIABLE SPEED 12-VDC BRUSHLESS FAN MOTOR DRIVERS
SLIS097 – MARCH 2000
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
dc
electrical characteristics, V
PWR
= 12 V, T
A
= – 30
°
C to 80
°
C (unless otherwise noted)
supply current
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VPWR
Supply voltage range
11
12
13
V
IVPWR
VPWRsupply current
VPWR supply current
Idle condition in locked rotor detect
ILOAD = –1 A, VOUT low, TA = 25
°
C
VPWM
≤
0.4 V
2.5
5
mA
5
mA
μ
A
ISLEEP
Sleep-state current
300
400
PHA, PHB low-side phase winding driver outputs
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μ
A
V
V
ILEAK
VOL
RDS(ON)
VCLAMP
PHA,PHB output leakage current
Output = OFF, VPHx = 12 V
Output = ON, IPHx = 1 A, TA = 25
°
C
Output = ON, IPHx = 1A, TA = 25
°
C
Output = OFF, IPHx = 200 mA
0.1
10
PHA, PHB low-level output voltage
0.5
0.6
PHA, PHB output ON resistance
0.5
0.6
PHA, PHB output active clamp voltage
32
38
Hall sensor signal conditioning
PARAMETER
TEST CONDITIONS
MIN
TYP
±
0.1
MAX
UNITS
μ
A
V
IIB(HL)
VICR(HL)
VIO
Hall input bias current
±
1
3.5
ICR(HL) common-mode input voltage range
1
Hall comparator input offset voltage
Over VICR(HL) = 1 V to 3.5 V
–7
0
7
mV
V
OUT
high-side phase winding driver output
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ILEAK
VOUT output sleep-state leakage current
Sleep state engaged,
VVOUT = 0 V to VPWR
Run state, Output high
IVOUT
°
C
±
0.1
±
10
μ
A
VOH
VOUT high-level output voltage
VPWR
– 0.4
VPWR
– 0.6
V
RDS(ON)
VRECIR
RDS(ON)(SYNC)
VOUT output high-side resistance to VPWR
VOUT output recirculation voltage
VOUT synchronous switch resistance to PGND
, A
0.4
0.6
V
Run state, Output low
IVOUT = –1 A, TA = 25
°
C
– 0.3
– 0.5
0.3
0.5
ILIMIT
Pulsed VOUT synchronous rectification current
limit
Run state, VOUT=VPWR=12V,
VCOSC > VPWM,
tPULSE = 100
μ
s, See Note 5
2
2.6
A
CP high-side gate drive charge pump capacitor input
PARAMETER
TEST CONDITIONS
IVCP = –60
μ
A, VPWM = 2.5 V
MIN
TYP
MAX
UNITS
VCP
VCP(UVLO)
Charge pump voltage
22
26
V
VCP undervoltage lock-out
6.5
7.6
8.5
V
C
OSC
external oscillator capacitor
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μ
A
μ
A
V
ICHARGE
IDISCHARGE
VDISCHARGE
COSC charge source current
COSC discharge sink current
COSC upper threshold for switching to current sink
COSC lower threshold for switching to current
source
VCOSC = 1.4 V, Charge mode
VCOSC = 1.4 V, Discharge mode
–130
–180
–230
130
180
230
2
2.3
2.6
VCHARGE
0.43
0.5
0.57
V
NOTE 5: VOUT current limit, in conjunction with thermal shutdown function, provides device survivability under VOUT-to-VPWR short condition.
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