- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299974 > TGL41-56A-46 (VISHAY SEMICONDUCTORS) 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB PDF資料下載
參數(shù)資料
| 型號： | TGL41-56A-46 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB |
| 封裝： | PLASTIC, GL41, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 35K |
| 代理商： | TGL41-56A-46 |
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88403
4
03-May-02
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
125
150
0
25
50
100
75
1
10
100
0
20
40
10
30
50
0.1
1.0
10
100
1.0
s
10
s
100
s
1.0ms
10ms
0.1
s
1.0
10
100
200
10
100
1,000
10,000
0
50
100
150
200
0
0.25
0.50
0.75
1.00
25
75
125
175
Non-Repetitive
Pulse Waveform
shown in Fig. 3
TA = 25°C
TGL41-6.8 TGL91A
TGL41-100 TGL200A
td, Pulse Width, sec.
TA, Ambient Temperature (°C)
V(BR), Breakdown Voltage (V)
Number of Cycles at 60 Hz
TL, Lead Temperature (°C)
P
PPM
,Peak
Pulse
Power
(kW)
Peak
Pulse
Power
(P
PPM
)or
Current
(I
PPM
)derating
in
percentage
(%)
PM
(A
V)
,Steady
State
Power
Dissipation
(W)
CJ,
Junction
Capacitance
(pF)
I FSM
,Peak
Forward
Surge
Current
(A)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Derating Curve
Fig. 5 - Steady State Power
Derating Curve
Fig. 6 - Maximum Non-Repetitive Peak Forward
Surge Current Unidirectional only
Fig. 4 - Typical Junction Capacitance
TJ = 25°C
f = 1.0 MHz
Vsq = 50MVpp
Unidirectional
Measured at Zero Bias
Measured at Stand-off
Voltage, VWM
0.31 x 0.31 x 0.08" Copper pads
(8 x 8 x 2mm)
60 Hz Resistive or
Inductive Load
8.3ms single half sine-wave
(JEDEC method)
TJ = TJ max.
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
相關PDF資料 |
PDF描述 |
|---|---|
| TGL41-62/46 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB |
| TGL41-7.5/46 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB |
| TGL41-82A | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB |
| TH7023 | PLL FREQUENCY SYNTHESIZER |
| THBT20012D | 290 V, SILICON SURGE PROTECTOR |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGL41-56A-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 200W 56V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TGL41-56A-E3/25 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TGL41-56A-E3/26 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TGL41-56A-E3/46 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TGL41-56A-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 56V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。