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參數(shù)資料
| 型號(hào)： | TFR1T |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.5 A, 1500 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, 3-3C1A, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 141K |
| 代理商： | TFR1T |
TFR1N,TFR1T
2006-11-07
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TFR1N,TFR1T
Strobe Applications (Fast Recovery)
Average forward current: IF (AV) = 0.5 A
Repetitive peak reverse voltage: VRRM = 1000, 1500 V
Reverse recovery time: trr = 10 s
Absolute Maximum Ratings
Characteristics
Symbol
Rating
Unit
TFR1N
1000
Repetitive peak
reverse voltage
TFR1T
VRRM
1500
V
Average forward current
IF (AV)
0.5
A
I
2t limit value (t = 1 to 10 ms)
I
2t
2
A
2s
Peak one cycle surge forward current
(non repetitive)
IFSM
20
A
Junction temperature
Tj
40 to 125
°C
Storage temperature range
Tstg
40 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 0.5 A
1.3
V
Repetitive peak reverse current
IRRM
VRRM = Rated
10
A
Reverse recovery time
trr
IF = 20 mA, IR = 1 mA
10
s
Marking
Abbreviation Code
Part No.
FR1N
TFR1N
FR1T
TFR1T
Unit: mm
JEDEC
DO-41
JEITA
―
TOSHIBA
3-3C1A
Weight: 0.3 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR
1T
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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