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參數(shù)資料
| 型號(hào)： | TFF11070HN |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | Low phase noise LO generator for VSAT applications |
| 封裝： | TFF11070HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 2830K |
| 代理商： | TFF11070HN |
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Key features
`
BGA720x: transmit VGAs
- Frequency band: 700 to 2200 or 2750 MHz
- Gain range: 23 or 31.5 dB
- OIP3: +36 dBm/110 mA (BGA7202), +41 dBm/520 mA
(BGA7204) @ minimum attenuation
`
BGA735x: dual receive IF VGAs
- Frequency band: 50 to 250 MHz
- Gain range: 24 or 28 dB
- OIP3: +44 dBm/245 mA or higher @ minimum attenuation
- Gain flatness: 0.1 dB
- Differential phase error: 0.1 degrees
`
Best-in-class linearity (OIP3) at low power consumption
`
ESD protection > 2 kV HBM and > 1.5 kV CDM on all pins
`
HVQFN32 leadless packages (5 x 5 mm)
Key applications
`
Wireless infrastructure base stations
`
Multi-carrier systems
These high performance variable gain amplifiers (VGAs)
support multiple frequency bands and the latest air interfaces.
They offer best-in-class linearity, very low power consumption,
high immunity to out-of-band signals, spurious performance,
and output power. They are ideally suited for GSM, W-CDMA,
WiMAX, LTE base-station infrastructure, and multi-carrier
systems.
The BGA7202 and BGA7204 are RF VGAs used in the transmit
path. The BGA7202 offers an output third-order intercept
(OIP3) of +45 dBm and 27 dB of attenuation. The attenuation is
controlled by means of an analog interface.
The BGA7204 provides an OIP3 of +37 dBm and 32 dB of
attenuation. The attenuation is controlled by means of a digital
interface. In addition, the gain curve of the BGA7204 can be
programmed via an SPI interface.
The BGA7350 and BGA7351 are dual, independently
controlled receive IF VGAs that operate from 50 to 250 MHz.
Integrated matching improves performance in the receiver
chain, because the VGA can drive the filter directly into the
analog-to-digital converter to ensure a constant input level.
The BGA7350 has a gain range of 24 dB, while the BGA7351
has a range of 28 dB. For both devices, the maximum
gain setting delivers 18 dBm output power at 1 dB gain
compression (P1dB), with superior linear performance and
overdrive performance up to +20 dBm. For gain control, each
amplifier uses a separate digital gain-control code, which is
provided externally through two sets of five bits. The resulting
gain flatness is 0.1 dB.
Other features
All four devices are RoHS-compatible and available in
space-saving HVQFN32 leadless packages that measure just
5 x 5 mm. They are unconditionally stable devices that offer
ESD protection at all pins and meet moisture sensitivity level 1.
Low noise, high linearity amplifiers BGU705x
The BGU705x series of low noise amplifiers (LNAs) provide low
noise figure (NF) of 0.6 dB and high linearity output third-order
intercept point of 30 dBm. This 50 ohm internally matched
LNA family has high input return loss and is designed to
operate between 500 MHz and 3800 MHz in 4 pin compatible
products. This family of products is ESD protected on all
terminals, and is housed in HVSON10 leadless packages.
And additionally offer compared to GaAs based discrete
equivalents better DC power consumption, high immunity
to high input level signals, spurious emission performance and
increased output power.
VGAs with superior linearity for enhanced system performance.
NXP variable gain amplifiers BGA7202/4, BGA7350/1.
Manufactured in NXP’s innovative QUBiC4 process, these VGAs deliver more on-chip functionality in less space, and meet the
most demanding requirements for system performance.
RF small signal
The RF small signal domain is defined as being the parts
between the DACs and high power PA and the parts between
the antenna and the ADCs. It comprises all the building blocks
for up and down conversion as well as the IF loop and the LNA
from the antenna.
Evaluation board BGA7124
Medium Power Amplifier BGA7024
(leaded SOT89 package)
Medium Power Amplifier BGA7127
(leadless SOT908 package)
Medium power amplifiers for wireless infrastructures
NXP’s medium power (20 to 33 dBm) gain blocks are designed to deliver high efficiency without compromising linearity. Along
with improved thermal performance and ESD robustness, the QUBiC4 process enables features such as active biasing, quiescent
current adjustment, flexible VGA interfaces, and power-saving shutdown modes. To save space, NXP’s medium power amplifier
MMICs are available in the smallest package size (3 x 3 mm) as well as in leadless options and SOT-89 packages.
NXP QUBiC4 process technology
NXP's innovative, high performance SiGe:C QUBiC4 process lets customers implement more functions into less space, with the
added benefits of competitive cost, superb reliability, and significant manufacturing advantages. Our state-of-the-art QUBiC4
technology and extensive IP availability speed the migration from GaAs components to silicon by enabling cutting-edge products
with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance,
and output power. QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance
upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high volume, NXP-owned 8-inch
waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field.
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic-based
smart functionality, and a set of active and passive devices for
high frequency mixed-signal designs including thick top metal
layers for high quality inductors. The device set includes a
37 GHz f
T
NPNs with 3.8 V breakdown voltage (BVce0) and low
noise figure (NF < 1.1 @ 2 GHz), 7 GHz f
T
VPNPs, a 28 GHz high
voltage NPN with 5.9 V breakdown voltage, differential and
single-ended varicaps with Q-factor > 30, scalable inductors
with Q-factor > 20, 800 MHz FT lateral PNP’s, 0.25 μm CMOS,
137, 220 & 12 to 2000 ohm/sq. poly and active resistors,
a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/μm
2
oxide
capacitor and a 5 fF/μm
2
MIM capacitor, 1 to 6 fF/μm
2
oxide
capacitors and various other devices including L-PNPs, isolated
NMOS, 3.3 V CMOS and RF-CMOS oxide capacitors, and other
various capacitors, including those for L-PNPs, isolated NMOS,
3.3 V CMOS, and RF-CMOS transistors. The QUBiC4+ process
is silicon-based and ideal for applications up to 5 GHz
(f
T
= 37 GHz , NF < 1.1 dB @ 1.2 GHz), as well as for medium
power amplifiers up to 33 dBm.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C-based extension
of the QUBiC process for high frequency mixed-signal designs
and offers a rich set of devices, including a 140 GHz f
T
NPN
with 2.5 V breakdown voltage and very low noise figure
(NF < 1.0 @ 10 GHz), 0.25 μm CMOS, a variety of resistors, a
5.7 fF/μm
2
oxide capacitor, and a 5 fF/μm
2
MIM capacitor.
QUBiC4X is ideal for applications that typically operate at up
to 30 GHz (f
T
= 137 GHz , NF < 0.8 dB @ 10 GHz) and ultra-low
noise applications such as LNAs and mixers.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers additional features for high frequency
mixed-signal designs, including 180 GHz f
T
NPNs with 1.4 V
breakdown voltage and ultra-low noise figure
(NF < 0.7 @ 10 GHz), 0.25 μm CMOS, several resistors, and
a 5.7 fF/μm
2
oxide capacitor, and a 5 fF/μm
2
MIM capacitor.
QUBiC4Xi represents the newest SiGe:C process, with
improved f
T
(> 200 GHz) and even lower noise figure
(NF < 0.5 7 dB @ 10 GHz). It is ideal for applications beyond
30 GHz, such as LO generators.
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