參數(shù)資料
型號(hào)： TFBS6712-TR1
廠商： Vishay Intertechnology,Inc.
英文描述： Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s) for IrDA Applications with Low voltage Logic (1.8 V)
中文描述： 超薄快速紅外線收發(fā)器（4兆飛行情報(bào)區(qū)/秒）與低電壓邏輯（1.8伏的IrDA應(yīng)用）
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 228K
代理商： TFBS6712-TR1
www.vishay.com
272
Document Number
8
4674
Rev. 1.2, 21-Feb-07
TFBS6712
Vishay Semiconductors
Absolute Maximum Ratings
Reference point Pin, GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test Conditions
Supply voltage range,
transceiver
Supply voltage range,
transmitter
Input currents
For all pins, except IRED anode
pin
Output sinking current
Power dissipation
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
IrDA
, the Infrared Data Association, implemented MIR and FIR with IrPHY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Stan-
dard. IrPhY 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any
case obsoletes the former version.
Symbol
V
CC1
Min
- 0.5
Typ.
Max
6
Unit
V
0 V < V
CC2
< 6 V
0 V < V
CC1
< 6 V
V
CC2
- 0.5
6.5
V
10
mA
25
500
mA
mW
P
D
T
J
T
amb
Junction temperature
Ambient temperature range
(operating)
Storage temperature range
Soldering temperature
Average output current
125
+
8
5
°C
°C
- 25
T
stg
- 25
+
8
5
260
125
°C
°C
mA
I
IRED
(DC)
I
IRED
(RP)
V
IREDA
V
in
d
Repetitive pulse output current
< 90
μ
s, t
on
< 20 %
600
mA
IRED anode voltage
Voltage at all inputs and outputs V
in
> V
CC1
is allowed
Virtual source size
- 0.5
6.5
V
- 0.5
1.5
5.5
V
Method: (1-1/e) encircled
energy
mm
Maximum intensity for Class 1 operation of
IEC60
8
25-1 or EN60
8
25-1, edition Jan. 2001
IrDA
specified maximum limit
Due to the internal limitation measures the device is a “class 1” device. It will not exceed the IrDA
intensity limit of 500 mW/sr
internal
limitation
to class 1
500
mW/sr
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