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參數(shù)資料
| 型號： | TFBS6711-TR3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s) for IrDA Applications |
| 中文描述： | 超薄快速紅外線收發(fā)器（4兆飛行情報區(qū)/秒）為IrDA應(yīng)用 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 227K |
| 代理商： | TFBS6711-TR3 |
www.vishay.com
260
Document Number
8
4676
Rev. 1.3, 21-Feb-07
TFBS6711
Vishay Semiconductors
Absolute Maximum Ratings
Reference point Pin, GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test Conditions
Supply voltage range,
transceiver
Supply voltage range,
transmitter
Input currents
For all Pins, Except IRED Anode
Pin
Output sinking current
Power dissipation
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
IrDA
, the Infrared Data Association, implemented MIR and FIR with IrPHY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Stan-
dard. IrPhY 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any
case obsoletes the former version.
Symbol
V
CC1
Min
- 0.5
Typ.
Max
6
Unit
V
0 V < V
CC2
< 6 V
0 V < V
CC1
< 6 V
V
CC2
- 0.5
6.5
V
10
mA
25
500
mA
mW
P
D
T
J
T
amb
Junction temperature
125
°C
Ambient temperature range
(operating)
Storage temperature range
- 25
+
8
5
°C
T
stg
- 25
+
8
5
°C
Soldering temperature
Average output current
260
125
°C
mA
I
IRED
(DC)
I
IRED
(RP)
I
IREDA
V
in
d
Repetitive pulse output current
< 90 μs, t
on
< 20 %
600
mA
IRED anode voltage
- 0.5
6.5
V
Voltage at all inputs and outputs V
in
> V
CC1
is allowed
Virtual source size
- 0.5
5.5
V
Method: (1-1/e) encircled
energy
1.5
mm
Maximum Intensity for Class 1 operation of
IEC60
8
25-1 or EN60
8
25-1, edition Jan. 2001
IrDA
specified maximum limit
Due to the internal limitation measures the device is a “class 1” device. It will not exceed the IrDA
intensity limit of 500 mW/sr
internal
limitation
to class 1
500
mW/sr
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TFBS6711-TR4 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:Transceiver Module |
| TFBS6711-TT3 | 功能描述:紅外收發(fā)器 FIR 4Mbit/s 2.4-3.6V Op Voltage RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強度:60 mW/sr 半強度角度:44 deg 脈沖寬度:2 us 最大上升時間:100 ns 最大下降時間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
| TFBS6712 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s) for IrDA Applications with Low voltage Logic (1.8 V) |
| TFBS6712-TR1 | 制造商:Vishay Intertechnologies 功能描述:4 Mbps 1.8 V 50 cm Side View SMT IrDA Low Profile Fast Infrared Transceiver |
| TFBS6712-TR3 | 功能描述:紅外收發(fā)器 FIR 4Mbit/s 2.4-3.6V Op Voltage RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強度:60 mW/sr 半強度角度:44 deg 脈沖寬度:2 us 最大上升時間:100 ns 最大下降時間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
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