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參數(shù)資料
| 型號： | TFBS4711-TR1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation |
| 中文描述： | 串行紅外收發(fā)器，爵士115.2千比特/秒，2.7 V至5.5 V工作電壓 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 275K |
| 代理商： | TFBS4711-TR1 |
VISHAY
TFBS4711
Vishay Semiconductors
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
5
Optoelectronic Characteristics
Receiver
T
amb
= 25 °C, V
CC
= 2.4 V to 5.5 V unless otherwise noted
Parameter
Minimum detection threshold
irradiance
Transmitter
T
amb
= 25 °C, V
CC
= 2.4 V to 5.5 V unless otherwise noted.
Parameter
IRED operating current
Test Conditions
Symbol
E
e
Min
Typ.
35
(3.5)
Max
80
(8)
Unit
mW/m
2
(
μ
W/cm
2
)
9.6 kbit/s to 115.2 kbit/s
λ
= 850 nm - 900 nm,
α
= 0 °, 15 °
λ
= 850 nm - 900 nm
Maximum detection threshold
irradiance
E
e
5
(500)
kW/m
2
(mW/cm
2
)
mW/m
2
(
μ
W/cm
2
)
ns
Maximum no detection
threshold irradiance
E
e
4
(0.4)
Rise time of output signal
10 % to 90 %, C
L
= 15 pF
90 % to 10 %, C
L
= 15 pF
Input pulse width > 1.2
μ
s
t
r(Rxd)
t
f(Rxd)
t
PW
10
100
Fall time of output signal
10
100
ns
μ
s
ns
Rxd pulse width
1.7
2.0
3.0
Leading edge jitter
Input Irradiance = 100 mW/m
2
,
≤
115.2 kbit/s
After shutdown active
or power-on
250
Standby /Shutdown delay,
receiver startup time
Latency
150
μ
s
t
L
150
μ
s
Test Conditions
Symbol
I
D
I
CC
Min
200
Typ.
300
Max
400
Unit
mA
T
amb
= - 25 °C to + 85 °C
During pulsed IRED operation
@ I
D
= 300 mA
Txd = 0 V, 0 < V
CC
< 5.5 V
α
= 0 °, Txd = High, SD = Low,
R = 0
, V
LED
= 2.4 V
α
= 0 °, 15 °, Txd = High, SD =
Low, R = 0
, V
LED
= 2.4 V
V
CC
= 5.0 V,
α
= 0 °, 15 °, Txd =
High or SD = High (Receiver is
inactive as long as SD = High)
Transceiver operating peak
supply current
0.57
mA
IRED leakage current
I
IRED
I
e
- 1
1
μ
A
Output radiant intensity
tbd
60
mW/sr
I
e
tbd
35
mW/sr
I
e
0.04
mW/sr
Output radiant intensity, angle of
half intensity
Peak-emission wavelength
α
± 22
°
λ
p
λ
t
ropt
t
fopt
t
opt
880
900
nm
Spectral bandwidth
Optical rise time
45
nm
ns
10
100
Optical fall time
10
100
ns
μ
s
Optical output pulse duration
Input pulse width 1.63
μ
s,
115.2 kbit/s
Input pulse width t
Txd
< 20
μ
s
Input pulse width t
Txd
≥
20
μ
s
1.41
1.63
2.23
t
opt
t
opt
t
Txd
t
Txd
+ 0.15
300
μ
s
μ
s
%
Optical overshoot
25
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PDF描述 |
|---|---|
| TFBS4711-TR3 | Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TFBS4711-TR3 | 功能描述:紅外收發(fā)器 SIR 115.2 kbits/s 2.7-5.5V Op Voltage RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強(qiáng)度:60 mW/sr 半強(qiáng)度角度:44 deg 脈沖寬度:2 us 最大上升時(shí)間:100 ns 最大下降時(shí)間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
| TFBS4711-TT1 | 功能描述:紅外收發(fā)器 SIR 115.2 kbits/s 2.7-5.5V Op Voltage RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強(qiáng)度:60 mW/sr 半強(qiáng)度角度:44 deg 脈沖寬度:2 us 最大上升時(shí)間:100 ns 最大下降時(shí)間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
| TFBS5607 | 功能描述:紅外收發(fā)器 MIR RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強(qiáng)度:60 mW/sr 半強(qiáng)度角度:44 deg 脈沖寬度:2 us 最大上升時(shí)間:100 ns 最大下降時(shí)間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
| TFBS5607-TR3 | 制造商:Vishay Intertechnologies 功能描述:TRANSCEIVER IC, Logic Device Type:-, Supply Voltage Min:2.4V, Supply Voltage Max |
| TFBS5700 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module (MIR, 1.152 Mbit/s) for IrDA? and Remote Control Applications |
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