參數(shù)資料
型號(hào): TFBS4650
廠商: Vishay Intertechnology,Inc.
英文描述: Standard IrDA with Low Power Consumption; Small Foodprint;
中文描述: 標(biāo)準(zhǔn)IrDAwith低功耗,小Foodprint;
文件頁(yè)數(shù): 3/13頁(yè)
文件大小: 235K
代理商: TFBS4650
www.vishay.com
122
Document Number 84672
Rev. 1.1, 03-Jul-06
TFBS4650
Vishay Semiconductors
Absolute Maximum Ratings
Reference point Pin, GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test Conditions
Supply voltage range,
transceiver
Supply voltage range,
transmitter
Voltage at RXD
All states
*)
Due to the internal limitation measures the device is a "class1" device.
**)
IrDA specifies the max. intensity with 500 mW/sr
***)
Sn/Pb-free soldering. The product passed VISHAY’s standard convection reflow profile soldering test.
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Standard. IrPhY 1.3 extended the Low
Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any case obsoletes the former version.
Symbol
V
CC1
Min
- 0.5
Typ.
Max
6.0
Unit
V
0 V < V
CC2
< 6 V
0 V < V
CC1
< 3.6 V
V
CC2
- 0.5
6.0
V
V
in
V
in
- 0.5
V
CC
+ 0.5
6.0
V
Input voltage range, transmitter
TXD
Input currents
Independent of V
CC1
or V
CC2
- 0.5
V
For all pins, except IRED anode
pin
- 40
40
mA
Output sinking current
Power dissipation
20
250
mA
mW
P
D
T
J
T
amb
Junction temperature
125
°C
Ambient temperature range
(operating)
Storage temperature range
- 25
+ 85
°C
T
stg
- 40
+ 100
°C
Soldering temperature ***)
see section Recommended
Solder Profile
< 90 μs, t
on
< 20 %
°C
Repetitive pulse output current
I
IRED
(RP)
I
IRED
(DC)
500
mA
Average output current
(transmitter)
Virtual source size
100
mA
Method: (1-1/e) encircled
energy
IEC60825-1 or
EN60825-1,
edition Jan. 2001
d
0.8
mm
Maximum Intensity for Class 1
I
e
*)
(500)
**)
mW/sr
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