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參數(shù)資料
| 型號： | TF709 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL |
| 中文描述： | 快速晶閘管 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 246K |
| 代理商： | TF709 |
TF709..Y
12/13
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Weight: 310g
2 holes 3.6x2.0 deep (in both electrodes)
34 nom
2
±
1.5
Cathode
Gate
Anode
34 nom
54 max
57.8 max
Nominal weight: 310g
Clamping force: 15kN
±
10%
Lead length: 250mm
Package outine type code: MU171
Cathode tab
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
AN4506
AN4840
AN4839
AN4870
AN4853
AN4999
AN5001
Calculating the junction temperature or power semiconductors
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
Thyristor and diode measurement with a multi-meter
Turn-on performance of thyristors in parallel
Use of V
TO
, r
T
on-state characteristic
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PDF描述 |
|---|---|
| TF70906Y | CONNECTOR ACCESSORY |
| TF70908Y | D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL |
| TF70910Y | CONNECTOR ACCESSORY |
| TF70912Y | CONNECTOR ACCESSORY |
| TF91320C | D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TF70906Y | 制造商:n/a 功能描述:Power SCR |
| TF70907Y | 制造商:n/a 功能描述:Power SCR |
| TF70908Y | 制造商:n/a 功能描述:Power SCR |
| TF70909Y | 制造商:n/a 功能描述:Power SCR |
| TF70910Y | 制造商:n/a 功能描述:Power SCR |
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