參數(shù)資料
型號(hào)： TF70914Y
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 晶閘管
英文描述： CONNECTOR ACCESSORY
中文描述： 900 A, 1400 V, SCR
封裝： MU171, 4 PIN
文件頁數(shù)： 7/13頁
文件大?。?/td> 350K
代理商： TF70914Y
3/13
www.dynexsemi.com
TF709..Y
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 2000A peak, T
case = 25
oC
I
RRM/IDRM
Peak reverse and off-state current
At V
RRM/VDRM, Tcase = 125
oC
Gate source 20V, 20
t
r ≤ 0.5s, Tj = 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM Tj = 125
oC, Gate open circuit
Min.
Max.
Units
-
2.05
V
-40
mA
-
300
V/
s
Repetitive 50Hz
-
500
A/
s
Non-repetitive
-
800
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj = 125
oC
r
T
On-state slope resistance
At T
vj = 125
oC
1.25
-V
-
0.4
m
Delay time
t
gd
-
1.5*
s
Total turn-on time
t
(ON)TOT
-
3.5*
s
T
j = 25C, IT = 50A,
V
D = 300V, IG = 1A,
dI/dt = 50A/
s, dI
G/dt = 1A/s
*Typical value.
I
H
Holding current
T
j = 25
oC, I
TM = 1A, VD = 12V
100*
-
mA
T
j = 125C, IT = 250A, VR = 50V,
dV/dt = 20V/
s (Linear to 60% V
DRM),
dI
R/dt = 50A/s, Gate open circuit
Turn-off time
t
q
25
-
s
t
q
code: Y
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM = 12V,
T
case = 25
oC, R
L = 6
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM = 12V, Tcase = 25
oC, R
L = 6
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM Tcase = 125
oC, R
L = 1k
-
3.0
V
-
200
mA
-
0.2
V
Typ.
Max.
Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
-
5.0
V
-10
A
-50
W
-3
W
I
L
Latching current
T
j = 25
oC, I
G = 0.5A, VD = 12V
300*
-
mA
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