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參數(shù)資料
| 型號： | TF44710A |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Fast Switching Thyristor |
| 中文描述： | 470 A, 1000 V, SCR |
| 封裝： | MU86, 4 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 249K |
| 代理商： | TF44710A |
TF447..A
3/13
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
≤
0.5
μ
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
1.85
V
-
25
mA
-
200
V/
μ
s
Repetitive 50Hz
-
500
A/
μ
s
Non-repetitive
-
800
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.2
-
V
-
1.0
m
Delay time
t
gd
-
1.5
μ
s
Total turn-on time
t
(ON)TOT
-
3
μ
s
T
j
= 25C, I
T
= 100A,
V
D
= 50V, I
G
= 1A,
dI/dt = 50A/
μ
s, dI
G
/dt = 1A/
μ
s
*Typical value.
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
-
70*
mA
T
= 125C, I
T
= 200A, V
= 50V,
dV/dt = 200V/
μ
s (Linear to 60% V
DRM
),
dI
R
/dt = 30A/
μ
s, Gate open circuit
Turn-off time
t
q
20
-
μ
s
t
q
code: A
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C, R
L
= 1k
-
3.0
V
-
200
mA
-
0.2
V
Typ.
Max.
Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
-
5.0
V
-
4
A
-
16
W
-
3
W
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