參數(shù)資料
型號： TF321M-A
廠商： SANKEN ELECTRIC CO LTD
元件分類： 晶閘管
英文描述： TO-220 3A High sensitive Thyristor
中文描述： 4.71 A, 200 V, SCR, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 45K
代理商： TF321M-A
I
Features
G
Repetitive peak off-state voltage: V
DRM
=200, 400, 600V
G
Average on-state current: I
T(AV)
=3A
G
High sensitive Gate trigger Current: I
GT
=0.1mA max
I
Absolute Maximum Ratings
I
Electrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
V
V
V
A
A
A
A
V
V
W
W
°
C
°
C
Tj=–40 to +125
°
C, R
GK
=1k
50Hz Half-cycle sinewave, Continuous current, Tc=87
°
C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125
°
C
200
200
300
300
TF321M-A TF341M-A TF361M-A
400
400
500
500
3.0
4.7
60
2.0
10
5.0
5.0
0.5
–40 to +110
600
600
700
700
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
–40 to +125
V
V
mA
V
mA
V/
μ
S
μ
S
°
C/W
Parameter
Symbol
Ratings
typ
min
max
1.0
Unit
Conditions
mA
mA
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
1.0
20
30
3.0
0.1
1.4
1
0.1
1.0
Tj=125
°
C,
V
D
=V
DRM
(V
RRM
), R
GK
=1k
T
C
=25
°
C,
I
TM
=5A
V
D
=6V, R
L
=10
, T
C
=25
°
C
R
GK
=1k
, Tj=25
°
C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C,
R
GK
=
1k
, C
GK
=
0.033
μ
F
Junction to case
Tc=25
°
C
V
D
=1/2
×
V
DRM
, Tj=125
°
C,
R
GK
=1k
18
TF321M-A,TF341M-A,TF361M-A
TO-220 3A High sensitive Thyristor
1.7
±
0.2
3
±
0
8
±
0
φ
3.75
±
0.1
1.35
±
0.15
2.5
±
0.1
2.5
±
0.1
+
0.2
–
0.1
0.65
10.4max
1
5.0max
2.1max
1
4
Weight: Approx. 2.6g
External Dimensions
(Unit: mm)
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
(1) (2) (3)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%
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