參數(shù)資料
型號(hào): TF219
廠商: Dynex Semiconductor Ltd.
英文描述: Fast Switching Thyristor
中文描述: 快速晶閘管
文件頁(yè)數(shù): 2/13頁(yè)
文件大?。?/td> 252K
代理商: TF219
TF219..B
2/13
SURGE RATINGS
Parameter
Conditions
Max.
Units
I
2
t for fusing
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
1.2
kA
A
2
s
Surge (non-repetitive) on-state current
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
Symbol
I
TSM
I
2
t
7.2
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.19
Anode dc
Clamping force 3.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
3.3
3.6
kN
-40
150
o
C
-
On-state (conducting)
-
125
o
C
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.24
o
C/W
Double side cooled
-
0.1
o
C/W
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
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