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參數(shù)資料
| 型號： | TF21918B |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Fast Switching Thyristor |
| 中文描述： | 190 A, 1800 V, SCR |
| 封裝： | MU86, 4 PIN |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 252K |
| 代理商： | TF21918B |
TF219..B
2/13
SURGE RATINGS
Parameter
Conditions
Max.
Units
I
2
t for fusing
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
1.2
kA
A
2
s
Surge (non-repetitive) on-state current
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
Symbol
I
TSM
I
2
t
7.2
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.19
Anode dc
Clamping force 3.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
3.3
3.6
kN
-40
150
o
C
-
On-state (conducting)
-
125
o
C
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.24
o
C/W
Double side cooled
-
0.1
o
C/W
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
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