參數(shù)資料
型號: TEMT1030
廠商: Vishay Intertechnology,Inc.
元件分類: 光發(fā)射/接收器
英文描述: Silicon Phototransistor
中文描述: 硅光電晶體管
文件頁數(shù): 2/9頁
文件大?。?/td> 355K
代理商: TEMT1030
www.vishay.com
2
Document Number 81554
Rev. 1.5, 08-Mar-05
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Range of Spectral Bandwidth
λ
0.5
V
CEsat
750 to 980
nm
Collector Emitter Saturation
Voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
E
e
= 1 mW/cm
2
,
λ
= 950 nm, V
CE
= 5V
0.3
V
Turn-On Time
t
on
2.0
μ
s
Turn-Off Time
t
off
2.3
μ
s
Cut-Off Frequency
f
c
180
kHz
Collector Light Current
I
ca
2
7.0
mA
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Figure 1. Collector Dark Current vs. Ambient Temperature
Figure 2. Relative Collector Current vs. Ambient Temperature
94 8304
20
I
-
C
100
40
60
80
T
amb
- Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
= 20 V
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
-
c
20
40
60
80
100
1.6
1.8
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
λ
T
amb
- Ambient Temperature (
°
C )
Figure 3. Collector Emitter Capacitance vs. Collector Emitter
Voltage
Figure 4. Turn On/Turn Off Time vs. Collector Current
0.1
1
10
0
2
4
6
8
10
V
CE
- Collector Emitter Voltage ( V )
100
94 8294
C
-
C
f = 1 MHz
0
2
8
94 8293
t
/
o
-
s
o
I
C
-
Collector Current ( mA )
6
4
V
CE
= 5 V
R
L
= 100
= 950 nm
λ
t
off
t
on
2
0
4
6
14
12
10
8
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