
TEKT5400S
Vishay Semiconductors
www.vishay.com
2 (7)
Rev. 1, 24–May–02
Document Number 81569
Basic Characteristics
T
amb
= 25
°
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
I
E
= 100
μ
A
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
E
CE
= 5 V, E
e
= 1 mW/cm
2
,
λ
p
= 950 nm
Symbol
V
CEO
V
ECO
I
CEO
C
CEO
I
ca
Min.
70
7
Typ.
Max.
Unit
V
V
nA
pF
mA
1
6
4
100
2
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
λ
p
λ
0.5
V
CEsat
±
37
920
deg
nm
nm
V
850...980
E
e
= 1 mW/cm
2
,
λ
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
0.3
t
on
6
μ
s
Turn–Off Time
t
off
5
μ
s
Cut–Off Frequency
f
c
110
kHz