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參數(shù)資料
| 型號： | TEKS5400 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon Photodetector with Logic Output |
| 中文描述： | 硅光電探測器輸出的邏輯 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 270K |
| 代理商： | TEKS5400 |
www.vishay.com
2
Document Number 83779
Rev. 2.0, 02-Apr-04
VISHAY
TEKS5400
Vishay Semiconductors
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply voltage
Switching Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Rise time
Test condition
Symbol
V
S1
/V
S2
I
S1
E
eon
E
eoff
/E
eon
λ
p
λ
0.5
V
OL
I
OH
Min
4.5
Typ.
Max
16
Unit
V
Supply current
V
S1
= 16 V
λ
= 950 nm, V
S1
= 5 V
V
S1
= 5 V
2
5
mA
Irradiance for threshold "On"
25
50
85
μ
W/cm
2
%
Hysteresis
80
Angle of half sensitivity
Wavelength of peak sensitivity
±30
920
°
nm
Range of Spectral Bandwidth
600 to 1020
nm
Output voltage
I
OL
= 16 mA, V
S1
= 5 V, E
e
≥
E
on
V
S1
= V
S2
= 16 V, I
F
= 0
0.2
0.4
V
μ
A
High level output current
1
Test condition
Symbol
t
r
Typ.
100
Unit
ns
V
S1
= V
S2
= 5 V, R
L
= 1 k
,
E
e
= 3
E
eon
,
λ
= 950 nm
V
S1
= V
S2
= 5 V, R
L
= 1 k
,
E
e
= 3
E
eon
,
λ
= 950 nm
V
S1
= V
S2
= 5 V, R
L
= 1 k
,
E
e
= 3
E
eon
,
λ
= 950 nm
V
S1
= V
S2
= 5 V, R
L
= 1 k
,
E
e
= 3
E
eon
,
λ
= 950 nm
V
S1
= V
S2
= 5 V, R
L
= 1 k
,
E
e
= 3
E
eon
,
λ
= 950 nm
Fall time
t
f
20
ns
Turn-on time
t
on
1.5
μ
s
Turn-off time
t
off
3.0
μ
s
Cut off frequency
f
sw
200
kHz
Fig. 1 Test Circuit
15180
R
G
= 50
t
T= 0.01
t
p
= 50 s
Channel II
IR–Diode
0
I
F
50
Channel I
V
S1
V
S2
I
S1
I
O
R
L
V
O
Oscilloscope
R
L
C
L
1 M
20 pF
Fig. 2 Pulse Diagram
50%
o
Channel I
t
on
Channel II
o
90%
10%
95 10819
t
off
I
F
V
O
t
f
t
r
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