參數(shù)資料
型號(hào): TEA6320T-T
廠商: NXP SEMICONDUCTORS
元件分類: 音頻控制
英文描述: 2 CHANNEL(S), SOUND FADER CONTROL CIRCUIT, PDSO32
文件頁數(shù): 38/40頁
文件大?。?/td> 188K
代理商: TEA6320T-T
1995 Dec 19
7
Philips Semiconductors
Preliminary specication
Sound fader control circuit
TEA6320
CHARACTERISTICS
VCC = 8.5 V; RS = 600 ; RL =10k; CL = 2.5 nF; AC coupled; f = 1 kHz; Tamb =25 °C; gain control Gv = 0 dB; bass
linear; treble linear; fader off; balance in mid position; loudness off; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
7.5
8.5
9.5
V
ICC
supply current
26
33
mA
VDC
internal DC voltage at inputs and
outputs
3.83
4.25
4.68
V
Vref
internal reference voltage at pin 21
4.25
V
Gv(max)
maximum voltage gain
RS =0 ; RL = ∞
19
20
21
dB
Vo(rms)
output voltage level for
Pmax at the power output stage
THD
≤ 0.5%; see Fig.11
2000
mV
start of clipping
THD = 1%
2300
mV
RL =2k; CL = 10 nF;
THD=1%
2000
mV
Vi(rms)
input sensitivity
Vo = 2000 mV; Gv =20dB
200
mV
fro
roll-off frequency
CKIN = 220 nF;
CKVL = 220 nF; Zi =Zi(min)
low frequency (
1 dB)
60
Hz
low frequency (
3 dB)
30
Hz
high frequency (
1 dB)
20000
Hz
CKIN = 470 nF;
CKVL = 100 nF; Zi =Zi(typ)
low frequency (
3 dB)
17
Hz
α
cs
channel separation
Vi = 2 V; frequency range
250 Hz to 10 kHz
90
96
dB
THD
total harmonic distortion
frequency range
20 Hz to 12.5 kHz
Vi = 100 mV; Gv =20dB
0.1
%
Vi = 1 V; Gv =0dB
0.05
0.15
%
Vi = 2 V; Gv =0dB
0.1
%
Vi = 2 V; Gv = 10 dB
0.1
%
RR
ripple rejection
Vr(rms) < 200 mV
f = 100 Hz
70
76
dB
f = 40 Hz to 12.5 kHz
66
dB
(S+N)/N
signal-plus-noise to noise ratio
unweighted;
20 Hz to 20 kHz (RMS);
Vo = 2.0 V; see Figs 6 and 7
105
dB
CCIR468-2 weighted; quasi
peak; Vo = 2.0 V
Gv =0dB
95
dB
Gv =12dB
88
dB
Gv =20dB
81
dB
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