參數(shù)資料
型號(hào): TEA1204
廠商: NXP Semiconductors N.V.
英文描述: High efficiency DC/DC converter
中文描述: 高效率的直流/直流轉(zhuǎn)換器
文件頁(yè)數(shù): 9/20頁(yè)
文件大?。?/td> 109K
代理商: TEA1204
1998 Mar 02
9
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1204T
Notes
1.
The average inductor current during current limit also depends on inductance value and resistive losses in all
components in the power path. In normal applications, the average current will be limited to 2.3 A (typ.), with limits
scaled down to minimum 2.07 A and maximum 2.53 A.
V
3
is the voltage at pin 3 (UPOUT/DNIN).
If the applied high level is less than V
3
1 V, the quiescent current level of the device will increase. The maximum
increase is 300
μ
A in the event that pin 2 is at 2.0 V.
2.
3.
Current levels
I
q
I
SHDWN
I
limN
I
limP
I
LX(max)
quiescent current at pin 3
shut-down current
current limit NFET
current limit PFET
maximum continuous current
at pin 5
up mode
50
2.38
2.05
60
2
2.80
2.40
70
10
3.20
2.75
1.0
μ
A
μ
A
A
A
A
up mode; note 1
down mode; note 1
Power MOSFETS
R
dsON(N)
R
dsON(P)
pin-to-pin resistance NFET
pin-to-pin resistance PFET
0.08
0.10
0.12
0.16
0.20
0.25
Timing
f
sw
t
res
switching frequency
response time from standby to
P
max
150
200
25
240
kHz
μ
s
Temperature
T
amb
T
max
operating ambient temperature
internal cut-off temperature
20
150
+25
165
+80
180
°
C
°
C
Digital levels
V
lL
LOW-level input voltage pins
1, 2, 7 and 8
HIGH-level input voltage pin 1
HIGH-level input voltage pin 2
HIGH-level input voltage
pins 7 and 8
0
0.4
V
V
IH
V
IH
V
IH
note 2
notes 2 and 3
notes 2 and 3
V
3
0.4
2.0
2.9
V
3
+ 0.3 V
V
3
+ 0.3 V
V
3
+ 0.3 V
Sense pin resistance
R
SENSE
SENSE pin resistance to GND
up or down to 3.3 V mode
down to 3.6 V mode
up to 5.0 V mode
437.2
476.8
662.2
546.5
596.0
827.8
655.8
715.2
993.4
k
k
k
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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