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參數(shù)資料
| 型號(hào)： | TEA1098UH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 無(wú)繩電話(huà)/電話(huà) |
| 英文描述： | Speech and handsfree IC |
| 中文描述： | TELEPHONE SPEECH CKT, UUC44 |
| 封裝： | DIE-44 |
| 文件頁(yè)數(shù)： | 24/40頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | TEA1098UH |
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1999 Oct 14
24
Philips Semiconductors
Product specification
Speech and handsfree IC
TEA1098
G
v(DTMF-RECO)
voltage gain from pin DTMF to
RECO
V
DTMF
= 50 mV (RMS)
16.5
dB
TX
AMPLIFIER USING
HFTX (
PINS
HFTX
AND
LN)
G
v(HFTX-LN)
voltage gain from pin HFTX to
LN
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
total harmonic distortion at LN
maximum input voltage at HFTX
(RMS value)
noise output voltage at pin LN;
pin HFTX shorted to GND
through 200
in series with
10
μ
F
gain reduction if not activated
V
HFTX
= 15 mV (RMS)
33.5
34.7
35.9
dB
G
v(f)
f = 300 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.25
dB
THD
V
HFTX(rms)
V
LN
= 1.4 V (RMS)
I
line
= 70 mA; THD = 2%
95
2
%
mV
V
no(LN)
psophometrically weighted
(p53 curve)
77.5
dBmp
G
v(mute)
RX amplifiers
see Table 2
60
80
dB
RX
AMPLIFIERS USING
IR (
PINS
IR
AND
RECO)
G
v(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
maximum input voltage on IR
(referenced to LN) (RMS value)
V
IR
= 8 mV (RMS)
28.7
29.7
30.7
dB
G
v(f)
f = 300 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.3
dB
V
IR(rms)(max)
I
line
= 70 mA; THD = 2%
50
mV
V
RECO(rms)(max)
maximum output voltage on
RECO (RMS value)
V
no(RECO)(rms)
noise output voltage at pin
RECO; pin IR is an open-circuit
(RMS value)
G
v(mute)
gain reduction if not activated
RX
EARPIECE AMPLIFIER
(
PINS
GARX
AND
QR)
G
v(RECO-QR)
gain voltage range between pins
RECO and QR
V
QR(rms)(max)
maximum output voltage on QR
(RMS value)
V
no(QR)(rms)
noise output voltage at pin QR;
pin IR is an open-circuit
(RMS value)
THD = 2%
0.75
0.9
V
psophometrically weighted
(p53 curve)
88
dBVp
see Table 2
60
80
dB
3
+15
dB
sine wave drive;
R
L
= 150
; THD < 2%
G
v(QR)
= 0 dB;
psophometrically weighted
(p53 curve)
0.75
0.9
V
88
dBVp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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