參數(shù)資料
型號: TEA1098ATV
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Speech and handsfree IC
中文描述: TELEPHONE SPEECH CKT, PDSO40
封裝: PLASTIC, VSOP-40
文件頁數(shù): 27/40頁
文件大?。?/td> 185K
代理商: TEA1098ATV
2000 Mar 21
27
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
I
i(h)
input current at high
voltage
for pin HFC
for pin MUTE
for pin BPC
V
BB
= 3.0 V
2.5
0
0
μ
A
μ
A
μ
A
Handsfree mode (HFC = HIGH)
HF
MICROPHONE AMPLIFIER
(
PINS
TXI, TXO
AND
GATX)
G
v(TXI-TXO)
voltage gain from pin
TXI to TXO
voltagegainadjustment
with R
GATX
gain variation with
frequencyreferencedto
1 kHz
gain variation with
temperaturereferenced
to 25
°
C
noise output voltage at
pin TXO; pin TXI is
shorted through 200
and 10
μ
F to GNDTX
gain reduction when
muted
gain reduction in
SECRET mode
V
TXI
= 3 mV (RMS);
R
GATX
= 30.1 k
12.7
15.2
17.7
dB
G
v
15
+16
dB
G
v(f)
f = 300 to 3400 Hz
±
0.1
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.15
dB
V
no(TXO)(rms)
psophometrically weighted
(p53 curve); G
v(TXI)
= 15 dB;
RMS value
101
dBVp
G
v(mute)
MUTE = 0; see Table 2
60
80
dB
G
v(SEC)
V
txi
= 10 mV (RMS);
MUTE = 1; BPC = 0;
see Table 2
60
dB
HF
LOUDSPEAKER AMPLIFIER
(
PINS
HFRX, LSAO, GALS
AND
DLC)
G
v(HFRX-LSAO)
nominal voltage gain
from pin HFRX to
LSAO
digital volume control
adjustment range
digital volume
adjustment step
voltagegainadjustment
with R
GALS
gain variation with
frequencyreferencedto
1 kHz
gain variation with
temperaturereferenced
to 25
°
C
maximum input voltage
at pin HFRX
(RMS value)
V
HFRX
= 30 mV (RMS);
R
GALS
= 255 k
;
LVCI = V
DD
; EVCI = V
DD
V
HFRX
= 30 mV (RMS);
R
GALS
= 255 k
per step
24.5
27
29.5
dB
G
v(HFRX-LSAO
)
25.5
27
28.5
dB
G
v(step)
3.85
dB
G
v
28
+7
dB
G
v(f)
f = 300 to 3400 Hz
±
0.3
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.3
dB
V
HFRX(rms)(max)
I
line
= 70 mA;
R
GALS
= 33 k
; for 2% THD
in the input stage
580
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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