參數(shù)資料
型號: TEA1098A
廠商: NXP Semiconductors N.V.
英文描述: Speech and handsfree IC
中文描述: 免提語音和集成電路
文件頁數(shù): 3/40頁
文件大?。?/td> 185K
代理商: TEA1098A
2000 Mar 21
3
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
QUICK REFERENCE DATA
I
line
= 15 mA; R
SLPE
= 20
; Z
line
= 600
; f = 1 kHz; T
amb
= 25
°
C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
MUTE = HIGH; BPC = HIGH; measured according to test circuits; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
line
line current operating range
normal operation
with reduced performance
I
line
= 15 mA
I
line
= 70 mA
I
line
= 15 mA
I
line
= 70 mA
V
BB
> 3.35 V + 0.25 V (typ.)
otherwise
11
1
3.4
5.7
2.75
4.9
3.1
3.7
6.1
3.0
5.3
3.35
V
BB
0.25
130
11
4.0
6.5
3.25
5.7
3.6
mA
mA
V
V
V
V
V
V
V
SLPE
stabilized voltage between
SLPE and GND
V
BB
regulated supply voltage for
internal circuitry
V
DD
regulated supply voltage on
pin V
DD
I
BB
current available on pin V
BB
in speech mode
in handsfree mode
current consumption on V
BB
during power-down phase
voltage gain from pin
MIC+/MIC
to LN
voltage gain from pin IR
(referenced to LN) to RECO
gain voltage range between
pins RECO and EARO
voltage gain from pin TXI to
TXO
voltage gain from pin HFTX
to LN
voltage gain from pin HFRX
to LSAO
11
9
460
mA
mA
μ
A
I
BB(PD)
PD = LOW
G
v(MIC-LN)
V
MIC
= 5 mV (RMS)
43.3
44.3
45.3
dB
G
v(IR-RECO)
V
IR
= 15 mV (RMS);
HFC = HIGH
28.7
29.7
30.7
dB
G
v(RECO-EARO)
3
+15
dB
G
v(TXI-TXO)
V
TXI
= 3 mV (RMS);
R
GATX
= 30.1 k
V
HFTX
= 15 mV (RMS)
12.7
15.2
17.7
dB
G
v(HFTX-LN)
33.5
34.7
35.9
dB
G
v(HFRX-LSAO
)
V
HFRX
= 30 mV (RMS);
R
GALS
= 255 k
;
I
line
= 70 mA
25.5
28
30.5
dB
SWR
SWR
switching range
switching range adjustment
40
40
+12
dB
dB
with R
SWR
referenced to
365 k
I
line
= 70 mA
G
v(trx)
gain control range for
transmit and receive
amplifiers affected by the
AGC; with respect to
I
line
= 15 mA
5.45
6.45
7.45
dB
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