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參數(shù)資料
| 型號： | TEA1096T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Speech and listening-in IC |
| 中文描述： | TELEPHONE SPEECH CKT, PDSO28 |
| 封裝： | PLASTIC, SO-28 |
| 文件頁數(shù)： | 23/32頁 |
| 文件大?。?/td> | 390K |
| 代理商： | TEA1096T |
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November 1994
23
Philips Semiconductors
Product Specification
Speech and listening-in IC
TEA1096; TEA1096A
V
QR(rms)
maximum output voltage for
THD = 2% (RMS value)
R
GAR
= 90.9 k
;
single-ended load;
R
QRP
= 150
R
GAR
= 90.9 k
;
bridge-tied load;
R
QRM
= 450
R
GAR
= 90.9 k
;
bridge-tied load with
300
series resistor;
C
QRM
= 60 nF;
f = 3400 Hz
Psophometrically
weighted (P53 curve);
single-ended load;
R
QRP
= 150
Psophometrically
weighted (P53 curve);
bridge-tied load;
R
QRM
= 450
0.3
0.375
V
0.6
0.72
V
0.75
0.95
V
V
norx(rms)
noise output voltage
(RMS value)
90
μ
V
180
μ
V
DTMF amplifier (DTMF, LN, MUTE)
|Z
i
|
input impedance between pins
DTMF and V
EE
voltage gain from pin DTMF
to LN
voltage gain variation with
temperature referenced
to 25
°
C
voltage gain variation with
frequency referenced to 1 kHz
voltage gain from pin DTMF to
QRP
16
20
24
k
G
vtx
V
DTMF
= 4 mV (RMS);
R
GAS
= 90.9 k
V
DTMF
= 4 mV (RMS);
T
amb
=
25 to +75
°
C
24.5
25.5
26.5
dB
G
vtxT
±
0.5
dB
G
vtxf
V
DTMF
= 4 mV (RMS);
f = 300 to 3400 Hz
MUTE = HIGH;
V
line
= 80 mV (RMS);
R
GAR
= 90.9 k
;
R
QRP
= 150
±
0.5
dB
G
vtx
19
dB
Automatic gain control (AGC); controlling the gain from LN to QRP, QRM and the gain from MICP, MICM to LN
G
trx
gain control range for
microphone and receiving
amplifiers with respect to
I
line
= 20 mA
I
line(h)
highest line current for
maximum gain
I
line(l)
lowest line current for minimum
gain
G
trx
change of gain when varying
I
line
from 20 mA to 40 mA
I
line
= 85 mA;
R
AGC
= 100 k
5
6
7
dB
R
AGC
= 100 k
28
mA
R
AGC
= 100 k
66
mA
R
AGC
= 100 k
1
1.5
2
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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