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參數(shù)資料
| 型號： | TEA1065T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Versatile telephone transmission circuit with dialler interface |
| 中文描述： | TELEPHONE SPEECH CKT, PDSO24 |
| 封裝： | PLASTIC, SO-24 |
| 文件頁數(shù)： | 17/28頁 |
| 文件大?。?/td> | 154K |
| 代理商： | TEA1065T |
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March 1994
17
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with
dialler interface
TEA1065
Gain adjustment GAR
(pin 6)
G
v
receiving amplifier, gain
adjustment range
11
+
8
dB
Mute input MUTE
(pin 20)
V
IH
V
IL
I
MUTE
G
v
input voltage HIGH
input voltage LOW
input current
change of microphone amplifier
gain
voltage gain from DTMF input
to QR
+
or QR
1.5
8
70
V
CC
0.3
15
V
V
μ
A
dB
MUTE = HIGH
G
v
MUTE = HIGH;
R4 = 100 k
single-ended; RT = 300
19
17
15
dB
Power-down input PD
(pin 18)
V
IH
V
IL
I
PD
input voltage HIGH
input voltage LOW
input current
1.5
-
-
-
-
2.5
V
CC
0.3
5.0
V
V
μ
A
Automatic gain control input AGC
(pin 23)
G
v
controlling the gain from IR to
QR
+
, QR
and the gain from
MIC
+
, MIC
to LN; gain control
range with respect to
I
line
= 15 mA
I
line
highest line current for
maximum gain
I
line
lowest line current for minimum
gain
G
v
change of gain between
I
line
= 15 and 35.5 mA
R6 = 118 k
5.5
5.9
6.3
dB
28
mA
50
mA
-1.5
dB
Current limiting input CURL
(pin 15)
V
BE
base-emitter voltage drop of
internal transistor
current gain of internal
transistor
maximum collector current of
internal transistor
see Fig.13;
I
C
= 50
μ
A = I
DOC
see Fig.13;
I
C
= 50
μ
A = I
DOC
see Fig.13
0.7
V
H
FE
60
120
I
C(max)
2
mA
Bandgap reference voltage output VBG
(pin 12)
V
BG
I
BG
Z
O
reference voltage
output drive capability
output impedance
100
1.22
-
12
+
50
V
μ
A
note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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