- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383994 > TE28F800C3 (Intel Corp.) IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5, PDF資料下載
參數(shù)資料
| 型號(hào)： | TE28F800C3 |
| 廠商： | Intel Corp. |
| 英文描述： | IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5, |
| 中文描述： | 3伏英特爾高級(jí)啟動(dòng)塊閃存 |
| 文件頁數(shù)： | 43/55頁 |
| 文件大?。?/td> | 638K |
| 代理商： | TE28F800C3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁當(dāng)前第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
E
4.8
T
A
= 0 °C to +70 °C
2-MBIT SmartVoltage BOOT BLOCK FAMILY
43
SEE NEW DESIGN RECOMMENDATIONS
Erase and Program Timings
—Commercial
V
PP
5 V ± 10%
12 V ± 5%
V
CC
3.3 ± 0.3 V
5 V ± 10%
3.3 ± 0.3 V
5 V ± 10%
Parameter
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit
Boot/Parameter Block Erase Time
0.84
7
0.8
7
0.44
7
0.34
7
s
Main Block Erase Time
2.4
14
1.9
14
1.3
14
1.1
14
s
Main Block Program Time (Byte)
1.7
1.8
1.6
1.2
s
Main Block Program Time (Word)
1.1
0.9
0.8
0.6
s
Byte Program Time
10
10
8
8
μs
Word Program Time
13
13
8
8
μs
NOTES:
1.
2.
All numbers are sampled, not 100% tested.
Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of V
CC
and V
PP
.
See Note 3 for typical conditions.
Typical conditions are +25
°C with V
and V
at the center of the specified voltage range.
Production programming using
V
CC
= 5.0 V, V
PP
= 12.0 V
typically results in a 60% reduction in programming time.
Contact your Intel representative for information regarding maximum byte/word program specifications.
3.
4.
4.9
Extended Operating Conditions
Table 11. Extended Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC
3.3 V V
CC
Supply Voltage (± 0.3 V)
1
3.0
3.6
Volts
5 V V
CC
Supply Voltage (10%)
2
4.50
5.50
Volts
NOTES:
1.
2.
AC specifications are valid at both voltage ranges.
See DC Characteristicstables for voltage range-specific specifications.
10% V
CC
specifications apply to 80 ns and 120 ns versions in their standard test configuration.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F200BV-T80 | POWERLINE: RP40-S_D_TG - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- International Safety Standard Approvals- Standard 50.8 x50.8x10.2mm Package- Efficiency to 90% |
| TE28F800BV-T80 | POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90% |
| TE28F800CET120 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F800C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F800C3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F800C3BA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F800C3BA90 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。