參數(shù)資料
型號(hào): TE28F800B3TA110
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 512K X 16 FLASH 2.7V PROM, 110 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁(yè)數(shù): 33/49頁(yè)
文件大?。?/td> 427K
代理商: TE28F800B3TA110
E
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
33
PRELIMINARY
TEST POINTS
INPUT
OUTPUT
V
CCQ
0.0
V
CCQ
2
V
CCQ
2
0580_11
NOTE:
AC test inputs are driven at V
for a logic
“1” and 0.0V for a logic “0.” Input timing begins, and output timing ends, at V
CCQ
/2.
Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are when V
CCQ
= 2.7V.
Figure 11. 2.7V
–3.6V Input Range and Measurement Points
C
L
Out
V
CCQ
Device
under
Test
R
1
R
2
0580_12
NOTE:
See table for component values.
Figure 12. Test Configuration
Test Configuration Component Values for Worst
Case Speed Conditions
Test Configuration
C
L
(pF)
R
1
(
) R
2
(
)
2.7V Standard Test
50
25K
25K
NOTE:
C
L
includes jig capacitance.
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