參數(shù)資料
型號: TE28F800B3T150
廠商: INTEL CORP
元件分類: DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
中文描述: 512K X 16 FLASH 3V PROM, 150 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 31/49頁
文件大小: 427K
代理商: TE28F800B3T150
E
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
31
PRELIMINARY
Table 10. DC Characteristics
(Continued)
Sym
Parameter
Notes
V
CC
= 2.7V
–3.6V
Unit
Test Conditions
Typ
Max
I
PPW
V
PP
Program Current
1,4
15
40
mA
V
PP
= V
PPH1
(3V)
Program in Progress
10
25
mA
V
PP
= V
PPH2
(12V)
Program in Progress
I
PPE
V
PP
Erase Current
1,4
13
25
mA
V
PP
= V
PPH1
(3V)
Erase in Progress
8
25
mA
V
PP
= V
PPH2
(12V)
Erase in Progress
I
PPES
V
PP
Erase Suspend
Current
1,4
50
200
μA
V
PP
= V
PPH1
or V
PPH2
Erase Suspend in Progress
I
PPWS
V
PP
Program Suspend
Current
1,4
50
200
μA
V
PP
= V
PPH1
or V
PPH2
Program Suspend in Progress
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