參數(shù)資料
型號： TE28F800B3BA90
廠商： INTEL CORP
元件分類： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 37/55頁
文件大?。?/td> 638K
代理商： TE28F800B3BA90
E
4.6
2-MBIT SmartVoltage BOOT BLOCK FAMILY
37
SEE NEW DESIGN RECOMMENDATIONS
AC Characteristics
—WE#-Controlled Write Operations
(1)
—Commercial
Prod
BV-60
Sym
Parameter
V
CC
3.3 ± 0.3 V
(9)
5 V ± 5%
(10)
5 V ± 10%
(10)
Unit
Load
50 pF
30 pF
100 pF
Note
Min
Max
Min
Max
Min
Max
t
AVAV
Write Cycle Time
110
60
70
ns
t
PHWL
RP# Setup to WE# Going Low
0.8
0.45
0.45
μ
s
t
ELWL
CE# Setup to WE# Going Low
0
0
0
ns
t
PHHWH
Boot Block Lock Setup to WE#
Going High
V
PP
Setup to WE# Going High
6,8
200
100
100
ns
t
VPWH
5,8
200
100
100
ns
t
AVWH
Address Setup to WE# Going
High
3
90
50
50
ns
t
DVWH
Data Setup to WE# Going High
4
90
50
50
ns
t
WLWH
WE# Pulse Width
90
50
50
ns
t
WHDX
Data Hold Time from WE# High
4
0
0
0
ns
t
WHAX
Address Hold Time from WE#
High
3
0
0
0
ns
t
WHEH
CE# Hold Time from WE# High
0
0
0
ns
t
WHWL
WE# Pulse Width High
20
10
20
ns
t
WHQV1
Duration of Word/Byte Program
2,5
6
6
6
μs
t
WHQV2
Duration of Erase (Boot)
2,5,6
0.3
0.3
0.3
s
t
WHQV3
Duration of Erase (Parameter)
2,5
0.3
0.3
0.3
s
t
WHQV4
Duration of Erase (Main)
2,5
0.6
0.6
0.6
s
t
QVVL
V
PP
Hold from Valid SRD
5,8
0
0
0
ns
t
QVPH
RP# V
HH
Hold from Valid SRD
6,8
0
0
0
ns
t
PHBR
Boot-Block Lock Delay
7,8
200
100
100
ns
相關PDF資料
PDF描述
TE28F200BV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800BV-B80 POWERLINE: RP30-S_DEW - 4:1 Wide Input Voltage Range- 30 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 88%
TE28F200BV-T60 RP30 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; 4:1 Wide Input Voltage Range; 30 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x40.6x10.2mm Package; Efficiency to 88%
TE28F800BV-T60 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
TE28F200BVT80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關代理商/技術參數(shù)
參數(shù)描述
TE28F800B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3T150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-T150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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