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參數(shù)資料
| 型號(hào)： | TE28F800B3-T150 |
| 廠商： | Intel Corp. |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 中文描述： | 智能3高級(jí)啟動(dòng)塊字寬 |
| 文件頁(yè)數(shù)： | 34/49頁(yè) |
| 文件大?。?/td> | 427K |
| 代理商： | TE28F800B3-T150 |
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SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
34
PRELIMINARY
6.0
OPERATING CONDITIONS (V
CCQ
= 1.8V
–2.2V)
Table 12. Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC1
2.7V–2.85V V
CC
Supply Voltage
1
2.7
2.85
Volts
V
CC2
2.7V–3.3V V
CC
Supply Voltage
1
2.7
3.3
Volts
V
CCQ
1.8V–2.2V I/O Supply Voltage
1,4
1.8
2.2
Volts
V
PP1
Program and Erase Voltage
1
2.7
2.85
Volts
V
PP2
1
2.7
3.3
Volts
V
PP3
1,2
11.4
12.6
Volts
Cycling
Block Erase Cycling
3
10,000
Cycles
NOTES:
1.
2.
See DC Characteristics tables for voltage range-specific specifications.
Applying V
= 11.4V
–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter. V
PP
may be connected to 12V for a total of 80 hours maximum. See Section 3.4 for
details.
For operating temperatures of –25
°
C– +85
°
C the device is projected to have a minimum block erase cycling of 10,000 to
30,000 cycles.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
3.
4.
6.1
DC Characteristics: V
CCQ
= 1.8V
–2.2V
These tables are valid for the following power supply combinations only:
1.
2.
V
CC1
and V
CCQ
and (V
PP1
or V
PP3
)
V
CC2
and V
CCQ
and (V
PP2
or V
PP3
)
Wherever the input voltage V
IN
is mentioned, it is required that V
IN
matches the chosen V
CCQ
.
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