參數(shù)資料
型號(hào)： TE28F800B3-B150
廠商： Intel Corp.
英文描述： SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
中文描述： 智能3高級(jí)啟動(dòng)塊字寬
文件頁(yè)數(shù)： 5/49頁(yè)
文件大小： 427K
代理商： TE28F800B3-B150
E
1.0
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
5
PRELIMINARY
INTRODUCTION
This
specifications for the Advanced Boot Block flash
memory family, which is optimized for low power,
portable systems. This family of products features
1.8V
–2.2V or 2.7V–3.6V I/Os and a low V
CC
/V
PP
operating range of 2.7V–3.6V for read and
program/erase operations. In addition this family is
capable of fast programming at 12V. Throughout
this document, the term “2.7V” refers to the full
voltage range 2.7V–3.6V (except where noted
otherwise) and “V
PP
= 12V” refers to 12V ±5%.
Section 1 and 2 provides an overview of the flash
memory family including applications, pinouts and
pin descriptions. Section 3 describes the memory
organization and operation for these products.
Finally, Sections 4, 5, 6 and 7 contain the
operating specifications.
preliminary
datasheet
contains
the
1.1
Smart 3 Advanced Boot Block
Flash Memory Enhancements
The new 4-Mbit, 8-Mbit, and 16-Mbit Smart 3
Advanced Boot Block flash memory provides a
convenient upgrade from and/or compatibility to
previous 4-Mbit and 8-Mbit Boot Block products.
The Smart 3 product functions are similar to lower
density products in both command sets and
operation, providing similar pinouts to ease density
upgrades.
The Smart 3 Advanced Boot Block flash memory
features
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend command which permits
program suspend to read
WP# pin to lock and unlock the upper two (or
lower two, depending on location) 4-Kword
blocks
V
CCQ
input for 1.8V–2.2V on all I/Os. See
Figure 1-4 for pinout diagrams and V
CCQ
location
Maximum program time specification for
improved data storage.
Table 1. Smart 3 Advanced Boot Block Feature Summary
Feature
28F160B3
Reference
V
CC
Read Voltage
2.7V– 3.6V
Table 9, Table 12
V
CCQ
I/O Voltage
1.8V–2.2V or 2.7V– 3.6V
Table 9, Table 12
V
PP
Program/Erase Voltage
2.7V– 3.6V or 11.4V– 12.6V
Table 9, Table 12
Bus Width
16 bit
Table 2
Speed
120 ns
Table 15
Memory Arrangement
256-Kbit x 16 (4-Mbit), 512-Kbit x 16 (8-Mbit),
1024-Kbit x 16 (16-Mbit)
Blocking (top or bottom)
Eight 4-Kword parameter blocks (4/8/16) &
Seven 32-Kword blocks (4-Mbit)
Fifteen 32-Kword blocks (8-Mbit)
Thirty-one 32-Kword main blocks (16-Mbit)
Section 2.2
Figures 5 and 6
Locking
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
switch
Section 3.3
Table 8
Operating Temperature
Extended: –40
°
C to +85
°
C
Table 9, Table 12
Program/Erase Cycling
10,000 cycles
Table 9, Table 12
Packages
48-Lead TSOP, 48-Ball
μ
BGA* CSP
Figures 1, 2, 3,
and 4
相關(guān)PDF資料
PDF描述
TE28F400B3-B150 TRANSFORMER MED 120/240V 600VA
TE28F400BV-B60 SWITCH OPERATOR RECT 1 OR 2 POLE
TE28F400BX-B80 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F400CV-B60 INDUCTOR, CHIP, SHIELDED, 3.3H, 509MA, 10%, 1210
TE28F400B3B90 TVS BIDIRECT 400W 75V SMA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F800B3B90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3BA110 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F800B3BA90 制造商:Intel 功能描述: 制造商:Intel 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP
TE28F800B3T110 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3T120 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*