參數(shù)資料
型號(hào)： TE28F640J3C-110
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲(chǔ)器（J3）
文件頁數(shù)： 27/72頁
文件大?。?/td> 905K
代理商： TE28F640J3C-110
256-Mbit J3 (x8/x16)
Datasheet
27
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Sym
Parameter
Typ
Max
(8)
Unit
Notes
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
218
654
μs
1,2,3,4,5,6,7
W16
t
WHQV3
t
EHQV3
Byte Program Time (Using Word/Byte Program Command)
210
630
μs
1,2,3,4
Block Program Time (Using Write to Buffer Command)
0.8
2.4
sec
1,2,3,4
W16
t
WHQV4
t
EHQV4
Block Erase Time
1.0
5.0
sec
1,2,3,4
W16
t
WHQV5
t
EHQV5
Set Lock-Bit Time
64
75/85
μs
1,2,3,4,9
W16
t
WHQV6
t
EHQV6
Clear Block Lock-Bits Time
0.5
0.70/1.4
sec
1,2,3,4,10
W16
t
WHRH1
t
EHRH1
Program Suspend Latency Time to Read
25
75/90
μs
1,2,3,9
W16
t
WHRH
t
EHRH
Erase Suspend Latency Time to Read
26
35/40
μs
1,2,3,9
NOTES:
1. Typical values measured at T
A
= +25 °C and nominal voltages. Assumes corresponding lock-bits are
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
WHQV1
, t
EHQV1
) is 6.8 μs/byte (typical).
7. Effective per-word program time (t
WHQV2
, t
EHQV2
) is 13.6 μs/word (typical).
8. Max values are measured at worst case temperature and V
CC
corner after 100k cycles (except as
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F640J3C-115 制造商:Intel 功能描述:NOR Flash, 4M x 16, 56 Pin, Plastic, TSSOP
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