參數(shù)資料
型號: TE28F400CVB80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 16 FLASH 5V PROM, PDSO48
封裝: 20 X 12 MM, TSOP-48
文件頁數(shù): 47/49頁
文件大?。?/td> 427K
代理商: TE28F400CVB80
E
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
47
PRELIMINARY
APPENDIX C
ACCESS TIME VS. CAPACITIVE LOAD
(t
AVQV
vs. C
L
)
Access Time vs. Load Capacitance
Derating Curve
115
116
117
118
119
120
121
122
123
124
30
50
70
100
Load Capacitance(pF)
A
Smart 3 Advanced Boot
Block
NOTE:
V
CCQ
= 2.7V
This chart shows a derating curve for device access time with respect to capacitive load. The value in the
DC characteristics section of the specification corresponds to C
L
= 50 pF.
NOTE:
Sampled, but not 100% tested
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相關代理商/技術參數(shù)
參數(shù)描述
TE28F400CV-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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