參數(shù)資料
型號: TE28F400BVB80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 16 FLASH 5V PROM, PDSO56
封裝: 20 X 14 MM, TSOP-56
文件頁數(shù): 35/49頁
文件大?。?/td> 427K
代理商: TE28F400BVB80
E
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
35
PRELIMINARY
Table 13. DC Characteristics: V
CCQ
= 1.8V
–2.2V
Sym
Parameter
Notes
V
CC1
:
2.7V–2.85V
V
CC2
:
2.7V–3.3V
Unit
Test Conditions
Typ
Max
I
LI
Input Load Current
1
± 1.0
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
= V
CCQ
or GND
I
LO
Output Leakage Current
1
± 10
μA
I
CCS
V
CC
Standby Current
1,7
20
50
μA
CMOS INPUTS
V
CC
= V
CC1
Max (2.7V–2.85V)
V
CCQ
= V
CCQ
Max
CE# = RP# = V
CCQ
150
250
μ
A
CMOS INPUTS
V
CC
= V
CC2
Max (2.7V–3.3V)
V
CCQ
= V
CCQ
Max
CE# = RP# = V
CCQ
CMOS INPUTS
V
CC
= V
CC
Max (V
CC1
or V
CC2
)
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
RP# = GND ± 0.2V
CMOS INPUTS
V
CC
= V
CC1
Max (2.7V–2.85V)
V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# = V
IL
f = 5 MHz, I
OUT
= 0 mA
Inputs = V
IL
or V
IH
CMOS INPUTS
V
CC
= V
CC2
Max (2.7V–3.3V)
V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# = V
IL
f = 5 MHz, I
OUT
= 0 mA
Inputs = GND ± 0.2V or V
CCQ
I
CCD
V
CC
Deep Power-Down
Current
1,7
1
10
μA
I
CCR
V
CC
Read Current
1,5,7
8
18
mA
12
23
mA
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