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參數(shù)資料
| 型號(hào)： | TE28F400BV-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | RP40 (G) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 40 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Design Meet Safety Standard; Standard 50.8 x50.8x10.2mm Package; Efficiency to 90% |
| 中文描述： | 512K X 8 FLASH 5V PROM, 110 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 22/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | TE28F400BV-T80 |
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SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
22
PRELIMINARY
Start
Write 40H
Program Address/Data
Read Status Register
SR.7 = 1
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PP
Range Error
Programming Error
Attempted Program to
Locked Block - Aborted
Program Successful
SR.3 =
SR.4 =
SR.1 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases where multiple bytes are programmed before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1
0
1
0
1
0
Command
Program Setup
Program
Comments
Data = 40H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = V
PP
Low Detect
Check SR.1
1 = Attempted Program to
Locked Block - Program
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Check SR.4
1 = V
PP
Program Error
0580_07
Figure 7. Automated Word Programming Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F160B3B120 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F160B3B150 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F160B3BC70 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F400B3B120 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3B150 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F400BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F400BX-B90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| TE28F400BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F400BX-T90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| TE28F400CEB120 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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