參數(shù)資料
型號(hào): TE28F400B3T150
廠商: INTEL CORP
元件分類(lèi): DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
中文描述: 256K X 16 FLASH 3V PROM, 150 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁(yè)數(shù): 20/49頁(yè)
文件大小: 427K
代理商: TE28F400B3T150
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
20
PRELIMINARY
Table 6. Command Bus Definitions
First Bus Cycle
Second Bus Cycle
Command
Notes
Oper
Addr
Data
Oper
Addr
Data
Read Array
5
Write
X
FFH
Intelligent Identifier
2,3.5
Write
X
90H
Read
IA
ID
Read Status Register
5
Write
X
70H
Read
X
SRD
Clear Status Register
5
Write
X
50H
Write (Program)
4,5
Write
X
40H
Write
PA
PD
Alternate Write (Program)
4,5
Write
X
10H
Write
PA
PD
Block Erase/Confirm
5
Write
X
20H
Write
BA
D0H
Program/Erase Suspend
5
Write
X
B0H
Program/Erase Resume
5
Write
X
D0H
ADDRESS
BA = Block Address
IA
=
Identifier Address
PA = Program Address
X = Don’t Care
NOTES:
1.
Bus operations are defined in Table 3.
2.
A
0
= 0 for manufacturer code, A
0
= 1 for device code.
3.
Following the Intelligent Identifier command, two read operations access manufacturer and device codes.
4.
Either 40H or 10H command is valid.
5.
When writing commands to the device, the upper data bus [DQ
8
–DQ
15
] should be either V
IL
or V
IH
, to minimize current
draw.
DATA
SRD = Status Register Data
ID = Identifier Data
PD = Program Data
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