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參數(shù)資料
| 型號(hào)： | TE28F320S3-100 |
| 廠商： | Intel Corp. |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 字寬FlashFile⑩Memory系列 |
| 文件頁(yè)數(shù)： | 32/52頁(yè) |
| 文件大?。?/td> | 1262K |
| 代理商： | TE28F320S3-100 |
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28F160S3, 28F320S3
E
32
ADVANCE INFORMATION
Bus
Operation
Write
Command
Comments
Write to
Buffer
Data = E8h
Addr = Block Address
XSR.7=valid
Addr = X
Check XSR.7
1 = Write buffer available
0 = Write buffer not available
Data = N = word/byte count
N = 0 corresponds to count = 1
Addr = Block Address
Data = write buffer data
Addr = device start address
Data = write buffer data
Addr = device address
Data = D0h
Addr = X
Read
Standby
Write
(Note 1, 2)
Write
(Note 3, 4)
Write
(Note 5, 6)
Write
Buffer
write to flash
confirm
Read
Status Register data
CE# & OE# low updates SR
Addr = X
Check SR.7
1 = WSM ready
0 = WSM busy
Standby
1. the Count register.
2. The device now outputs the Status Register when
read (XSR is no longer available).
3. Write Buffer contents will be programmed at the
device start address or destination flash address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance.
5. The device aborts the Write to Buffer command if the
current address is outside of the original block
address.
6. The Status Register indicates an
“improper command
sequence” if the Write to Buffer command is aborted.
Follow this with a Clear Status Register command.
Full status check can be done after all Erase and
Write sequences complete. Write FFh after the last
operation to reset the device to Read Array mode.
Start
Write Word or Byte
Count, Block Address
Write Buffer Data,
Start Address
X = 0
X = X + 1
Write Next Buffer Data,
Device Address
Abort Buffer
Write
Command
X = N
Another
Buffer
Write
Read
Status Register
SR.7 =
Buffer Write to
Flash Complete
Read Extended
Status Register
XSR.7 =
1
No
Yes
No
No
1
Buffer Write to
Flash Aborted
Yes
No
Yes
Full Status
Check if Desired
Buffer Write to Flash
Confirm D0H
Issue Write Command
E8H, Block Address
Write to Another
Block Address
Write Buffer
Time-Out
0
Yes
Suspend
Write
Yes
Suspend
Write Loop
Set Time-Out
Issue Read
Status Command
No
0
Figure 7. Write to Buffer Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F160S3-100 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F320S3-120 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F160S3-120 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F400B3T90 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F004 | 3 Volt Advanced Boot Block Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F320S3-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| TE28F400B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F400B3B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400B3-B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
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