參數(shù)資料
型號： TE28F320B3TC70
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 7/58頁
文件大?。?/td> 920K
代理商： TE28F320B3TC70
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
3UHOLPLQDU\
1
1.0
Introduction
This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory
family, which is optimized for low power, portable systems. This family of products features
1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low V
CC
/V
PP
operating range of 2.7 V–3.6 V for read,
program, and erase operations. In addition this family is capable of fast programming at 12 V.
Throughout this document, the term “2.7 V” refers to the full voltage range 2.7 V–3.6 V (except
where noted otherwise) and “V
PP
= 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an
overview of the flash memory family including applications, pinouts and pin descriptions. Section
3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0
contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other
reference information.
The 3 Volt Advanced Boot Block flash memory features:
Enhanced blocking for easy segmentation of code and data or additional design flexibility
Program Suspend to Read command
V
CCQ
input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and
V
CCQ
location
Maximum program and erase time specification for improved data storage.
NOTES:
1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.
2. 4-Mbit density not available in
μ
BGA* CSP.
3. V
CC
Max is 3.3 V on 0.25
μ
m 32-Mbit devices.
4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.
Table 1. 3 Volt Advanced Boot Block Feature Summary
Feature
28F004B3
(2)
, 28F008B3,
28F016B3
28F400B3
(2)
,
28F800B3,
28F160B3, 28F320B3
,
28F640B3
Reference
V
CC
Read Voltage
2.7 V– 3.6 V
Section 4.2
,
Section 4.4
Section 4.2, 4.4
Section 4.2, 4.4
Table 3
Section 4.5
V
CCQ
I/O Voltage
V
PP
Program/Erase Voltage
Bus Width
Speed
1.65 V–2.5 V or 2.7 V– 3.6 V
2.7 V– 3.6 V or 11.4 V– 12.6 V
8 bit
16 bit
70 ns, 80 ns, 90 ns, 100 ns, 110 ns
Memory Arrangement
512 Kbit x 8 (4 Mbit)
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit),
2048 Kbit x 16 (32 Mbit),
4096 Kbit x 16 (64 Mbit)
Section 2.2
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks
and
Seven 64-Kbyte blocks (4 Mbit) or
Fifteen 64-Kbyte blocks (8 Mbit) or
Thirty-one 64-Kbyte main blocks (16 Mbit)
Sixty-three 64-Kbyte main blocks (32 Mbit)
One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
Extended: –40
°
C to +85
°
C
100,000 cycles
Section 2.2
Appendix C
Locking
Section 3.3
Table 8
Section 4.2, 4.4
Section 4.2, 4.4
Operating Temperature
Program/Erase Cycling
Packages
40-lead TSOP
(1)
,
48-Ball
μ
BGA* CSP
(2)
48-Lead TSOP,
48-Ball
μ
BGA CSP
(2)
,
48-Ball VF BGA
(4)
Figure 3
,
Figure 4
相關(guān)PDF資料
PDF描述
TE28F640B3TC90 3 Volt Advanced Boot Block Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F320B3TC90 制造商:Intel 功能描述:2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
TE28F320B3TD70 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述:
TE28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
TE28F320C3B110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320C3B90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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