參數(shù)資料
型號： TE28F320B3BA100
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 2M X 16 FLASH 2.7V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 3/58頁
文件大?。?/td> 920K
代理商： TE28F320B3BA100
3UHOLPLQDU\
iii
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Contents
1.0
Introduction
..................................................................................................................1
1.1
Product Overview..................................................................................................2
Product Description
..................................................................................................3
2.1
Package Pinouts ...................................................................................................3
2.2
Block Organization................................................................................................7
2.2.1
Parameter Blocks.....................................................................................7
2.2.2
Main Blocks..............................................................................................7
Principles of Operation
............................................................................................7
3.1
Bus Operation .......................................................................................................7
3.1.1
Read.........................................................................................................8
3.1.2
Output Disable..........................................................................................8
3.1.3
Standby....................................................................................................8
3.1.4
Deep Power-Down / Reset.......................................................................8
3.1.5
Write.........................................................................................................9
3.2
Modes of Operation...............................................................................................9
3.2.1
Read Array...............................................................................................9
3.2.2
Read Identifier........................................................................................11
3.2.3
Read Status Register.............................................................................11
3.2.4
Program Mode........................................................................................12
3.2.5
Erase Mode............................................................................................12
3.3
Block Locking......................................................................................................14
3.3.1
WP# = V
IL
for Block Locking ..................................................................14
3.3.2
WP# = V
IH
for Block Unlocking ..............................................................15
3.4
V
PP
Program and Erase Voltages.......................................................................15
3.4.1
V
PP
= V
IL
for Complete Protection .........................................................15
3.5
Power Consumption............................................................................................15
3.5.1
Active Power ..........................................................................................16
3.5.2
Automatic Power Savings (APS)............................................................16
3.5.3
Standby Power.......................................................................................16
3.5.4
Deep Power-Down Mode .......................................................................16
3.6
Power-Up/Down Operation .................................................................................16
3.6.1
RP# Connected to System Reset...........................................................17
3.6.2
V
CC
, V
PP
and RP# Transitions...............................................................17
3.7
Power Supply Decoupling...................................................................................17
Electrical Specifications
........................................................................................18
4.1
Absolute Maximum Ratings.................................................................................18
4.2
Operating Conditions...........................................................................................19
4.3
Capacitance ........................................................................................................19
4.4
DC Characteristics ..............................................................................................20
4.5
AC Characteristics —Read Operations...............................................................23
4.6
AC Characteristics —Write Operations...............................................................27
4.7
Program and Erase Timings................................................................................31
2.0
3.0
4.0
相關(guān)PDF資料
PDF描述
TE28F320B3BC90 3 Volt Advanced Boot Block Flash Memory
TE28F320B3BC70 3 Volt Advanced Boot Block Flash Memory
TE28F320B3TA110 3 Volt Advanced Boot Block Flash Memory
TE28F640C3 3 Volt Intel Advanced+ Boot Block Flash Memory
TE28F320C3 3 Volt Intel Advanced+ Boot Block Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F320B3BA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F320B3BC90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F320B3BD90A 制造商:Micron Technology Inc 功能描述:32MB, ARMAGOSA 48LD TSOP
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