參數(shù)資料
型號(hào)： TE28F200CVT80
廠商： Intel Corp.
英文描述： 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 2兆位SmartVoltage啟動(dòng)塊閃存系列
文件頁(yè)數(shù)： 53/55頁(yè)
文件大?。?/td> 638K
代理商： TE28F200CVT80
E
4.15
T
A
=
–40 °C to +85 °C
2-MBIT SmartVoltage BOOT BLOCK FAMILY
53
SEE NEW DESIGN RECOMMENDATIONS
Erase and Program Timings
—Extended Temperature
V
PP
5 V ± 10%
12 V ± 5%
V
CC
3.3 ± 0.3 V
5 V ± 10%
3.3 ± 0.3 V
5 V ± 10%
Parameter
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit
Boot/Parameter Block Erase Time
0.84
7
0.8
7
0.44
7
0.34
7
s
Main Block Erase Time
2.4
14
1.9
14
1.3
14
1.1
14
s
Main Block Program Time (Byte)
1.7
1.4
1.6
1.2
s
Main Block Program Time (Word)
1.1
0.9
0.8
0.6
s
Byte Program Time
10
10
8
8
μs
Word Program Time
13
13
8
8
μs
NOTES:
1.
2.
All numbers are sampled, not 100% tested.
Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of V
CC
and V
PP
. See Note 3 for typical conditions.
Typical conditions are +25
°C with V
and V
at the center of the specified voltage range. Production programming using
V
CC
= 5.0 V, V
PP
= 12.0 V typically results in a 60% reduction in programming time.
Contact your Intel representative for information regarding maximum byte/word program specifications.
3.
4.
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TE28F200CV-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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