參數(shù)資料
型號(hào): TE28F200CV-B80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 8 FLASH 5V PROM, 110 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 51/55頁
文件大?。?/td> 638K
代理商: TE28F200CV-B80
E
NOTES:
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC
Characteristicsduring read mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally
which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
. (Table 7)
4. Refer to command definition table for valid D
IN
. (Table 7)
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1)
6. For boot block program/erase, RP# should be held at V
HH
or WP# should be held at V
IH
until operation completes
successfully.
7. Time t
PHBR
is required for successful locking of the boot block.
8. Sampled, but not 100% tested.
9. See Test Configuration(Figure 21), 3.6 V and 3.3
±
0.3 V Standard Test component values.
10. See Test Configuration(Figure 21), 5 V Standard Test component values.
2-MBIT SmartVoltage BOOT BLOCK FAMILY
51
SEE NEW DESIGN RECOMMENDATIONS
相關(guān)PDF資料
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TE28F200CV-T60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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TE28F200CV-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F256J3A-110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
TE28F256J3A-115 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)