參數(shù)資料
型號： TE28F160B3TA90
廠商： INTEL CORP
元件分類： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 17/48頁
文件大?。?/td> 304K
代理商： TE28F160B3TA90
E
A Read Array command can now be written to the
CUI to read data from blocks other than that which
is suspended. The only other valid commands while
program is suspended, are Read Status Register,
Read Identifier, and Program Resume. After the
Program Resume command is written to the flash
memory, the WSM will continue with the program
process and status register bits SR.2 and SR.7 will
automatically be cleared. After the Program
Resume
command
is
automatically outputs status register data when
read (see Appendix F for Program Suspend and
Resume Flowchart). V
must remain at the same
V
PP
level used for program while in program
suspend mode. RP# must also remain at V
IH.
SMART 3 ADVANCED BOOT BLOCK
17
PRELIMINARY
written,
the
device
3.2.5
ERASE MODE
To erase a block, write the Erase Set-up and Erase
Confirm commands to the CUI, along with an
address identifying the block to be erased. This
address is latched internally when the Erase
Confirm command is issued. Block erasure results
in all bits within the block being set to
“1.” Only one
block can be erased at a time. The WSM will
execute a sequence of internally-timed events to
program all bits within the block to “0,” erase all bits
within the block to “1,” then verify that all bits within
the block are sufficiently erased. While the erase
executes, status bit 7 is a “0.”
When the status register indicates that erasure is
complete, check the erase status bit to verify that
the erase operation was successful. If the erase
operation was unsuccessful, SR.5 of the status
register will be set to a “1,” indicating an erase
failure. If V
was not within acceptable limits after
the Erase Confirm command was issued, the WSM
will not execute the erase sequence; instead, SR.5
of the status register is set to indicate an erase
error, and SR.3 is set to a “1” to identify that V
PP
supply voltage was not within acceptable limits.
After an erase operation, clear the status register
(50H) before attempting the next operation. Any
CUI instruction can follow after erasure is
completed; however, to prevent inadvertent status
register reads, it is advisable to place the flash in
read array mode after the erase is complete.
3.2.5.1
Suspending and Resuming Erase
Since an erase operation requires on the order of
seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in
order to read data from or program data to another
block in memory. Once the erase sequence is
started, writing the Erase Suspend command to the
CUI requests that the WSM pause the erase
sequence at a predetermined point in the erase
algorithm. The status register will indicate if/when
the erase operation has been suspended.
A Read Array/Program command can now be
written to the CUI in order to read data from/
program data to blocks other than the one currently
suspended.
The
Program
subsequently be suspended to read yet another
array location. The only valid commands while
erase is suspended are Erase Resume, Program,
Read Array, Read Status Register, or Read
Identifier. During erase suspend mode, the chip can
be placed in a pseudo-standby mode by taking CE#
to V
IH
. This reduces active current consumption.
command
can
Erase Resume continues the erase sequence when
CE# = V
IL
. As with the end of a standard erase
operation, the status register must be read and
cleared before the next instruction is issued.
相關(guān)PDF資料
PDF描述
TE28F320B3B110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3T90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3TA90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F160B3TA-90 制造商:Intel 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP
TE28F160B3TC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3TC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3TD70A 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
TE28F160C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
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