參數(shù)資料
型號(hào): TE28F160B3B110
廠商: INTEL CORP
元件分類(lèi): DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 1M X 16 FLASH 2.7V PROM, 110 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁(yè)數(shù): 22/48頁(yè)
文件大?。?/td> 304K
代理商: TE28F160B3B110
SMART 3 ADVANCED BOOT BLOCK
E
22
PRELIMINARY
After any program or block erase operation is
complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read array mode
via the Read Array command if access to the flash
memory array is desired.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require
careful
device
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Read current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
decoupling.
System
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
相關(guān)PDF資料
PDF描述
TE28F160B3BA110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3BA90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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