• <strong id="9siju"></strong>
    <form id="9siju"></form>
  • 參數(shù)資料
    型號: TE28F160B3-T150
    廠商: Intel Corp.
    英文描述: SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
    中文描述: 智能3高級啟動塊字寬
    文件頁數(shù): 16/49頁
    文件大?。?/td> 427K
    代理商: TE28F160B3-T150
    SMART 3 ADVANCED BOOT BLOCK
    –WORD-WIDE
    E
    16
    PRELIMINARY
    (erase suspend to program, erase suspend to read
    and program suspend to read) are available only
    during suspended operations. These modes are
    reached using the commands summarized in
    Table 4. A comprehensive chart showing the state
    transitions is in Appendix B.
    3.2.1
    READ ARRAY
    When RP# transitions from V
    IL
    (reset) to V
    IH
    , the
    device will be in the read array mode and will
    respond to the read control inputs (CE#, address
    inputs, and OE#) without any commands being
    written to the CUI.
    When the device is in the read array mode, four
    control signals must be controlled to obtain data at
    the outputs.
    WE# must be logic high (V
    IH
    )
    CE# must be logic low (V
    IL
    )
    OE# must be logic low (V
    IL
    )
    RP# must be logic high (V
    IH
    )
    In addition, the address of the desired location must
    be applied to the address pins.
    If the device is not in read array mode, as would be
    the case after a program or erase operation, the
    Read Array command (FFH) must be written to the
    CUI before array reads can take place.
    Table 4. Command Codes and Descriptions
    Code
    Device Mode
    Description
    00
    Invalid/
    Reserved
    Unassigned commands that should not be used. Intel reserves the right to
    redefine these codes for future functions.
    FF
    Read Array
    Places the device in read array mode, such that array data will be output on the
    data pins.
    40
    Program
    Set-Up
    This is a two-cycle command. The first cycle prepares the CUI for a program
    operation. The second cycle latches addresses and data information and
    initiates the WSM to execute the Program algorithm. The flash outputs status
    register data when CE# or OE# is toggled. A Read Array command is required
    after programming to read array data. See Section 3.2.4.
    10
    Alternate
    Program Set-Up
    (See 40H/Program Set-Up)
    20
    Erase
    Set-Up
    Prepares the CUI for the Erase Confirm command. If the next command is not
    an Erase Confirm command, then the CUI will (a) set both SR.4 and SR.5 of the
    status register to a
    “1,” (b) place the device into the read status register mode,
    and (c) wait for another command. See Section 3.2.5.
    D0
    Program
    Resume
    Erase Resume/
    Erase Confirm
    If the previous command was an Erase Set-Up command, then the CUI will
    close the address and data latches, and begin erasing the block indicated on the
    address pins. If a program or erase operation was previously suspended, this
    command will resume that operation.
    During program/erase, the device will respond only to the Read Status Register,
    Program Suspend/Erase Suspend commands and will output status register
    data when CE# or OE# is toggled.
    相關(guān)PDF資料
    PDF描述
    TE28F400B3-T120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
    TE28F400B3-T150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
    TE28F800B3-T120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
    TE28F800B3-T150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
    TE28F400CV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    TE28F160B3T90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
    TE28F160B3TA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
    TE28F160B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
    TE28F160B3TA-90 制造商:Intel 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP
    TE28F160B3TC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory