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參數(shù)資料
| 型號(hào)： | TE28F016S5-110 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 中文描述： | 2M X 8 FLASH 5V PROM, 110 ns, PDSO40 |
| 封裝： | 10 X 20 MM, TSOP-40 |
| 文件頁(yè)數(shù)： | 23/37頁(yè) |
| 文件大?。?/td> | 611K |
| 代理商： | TE28F016S5-110 |
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E
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY
23
PRODUCT PREVIEW
SR.7 =
0
1
Start
Write 60H,
Block/Device Address
Write 01H/F1H,
Block/Device Address
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read Status
Register
V
PP
Range Error
1
0
Command Sequence
Error
SR.3 =
SR.4 =
SR.4,5 =
Set Lock-Bit Error
Bus
Operation
Command
Comments
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple lock-bits are set before
full status is checked.
If error is detected, clear the Status Register before attempting retry
or other error recovery.
Check SR.4
1 = Set Lock-Bit Reset Error
Standby
Bus
Operation
Command
Comments
Write
Write
Set
Block/Master
Lock-Bit Setup
Read
Data = 60H
Addr = Block Address (Block),
Device Address (Master)
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent lock-bit set operations.
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations.
Write FFH after the last lock-bit set operation to place device in
read array mode.
Status Register Data
Standby
Set
Block or Master
Lock-Bit Confirm
Data = 01H (Block),
F1H (Master)
Addr = Block Address (Block),
Device Address (Master)
Set Lock-Bit Successful
Standby
0
1
Device Protect Error
SR.1 =
Check SR.3
1 = V
PP
Error Detect
Check SR.1
1 = Device Protect Detect
RP# = V
,
(Set Master Lock-Bit Operation)
RP# = V
, Master Lock-Bit Is Set
(Set Block Lock-Bit Operation)
Figure 10. Set Block and Master Lock-Bit Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F008S5-100 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| TE28F010-90 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F010-150 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F010-120 | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| TE28F016B3B110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F016SC-110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
| TE28F020-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F020-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F020-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F032B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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